Influence of Ta/Si atomic ratio on the interdiffusion between Ta-Si-N and Cu at elevated temperature

L. W. Lai; J. S. Chen; Wu Shiung Hsu

doi:10.1063/1.1609649

Influence of Ta/Si atomic ratio on the interdiffusion between Ta-Si-N and Cu at elevated temperature

L. W. Lai, J. S. Chen, Wu Shiung Hsu

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	5396-5398
Number of pages	3
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1609649
Publication status	Published - 2003 Oct 15

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1609649

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title = "Influence of Ta/Si atomic ratio on the interdiffusion between Ta-Si-N and Cu at elevated temperature",

author = "Lai, {L. W.} and Chen, {J. S.} and Hsu, {Wu Shiung}",

year = "2003",

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volume = "94",

pages = "5396--5398",

journal = "Journal of Applied Physics",

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AU - Lai, L. W.

AU - Chen, J. S.

AU - Hsu, Wu Shiung

PY - 2003/10/15

Y1 - 2003/10/15

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SP - 5396

EP - 5398

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Influence of Ta/Si atomic ratio on the interdiffusion between Ta-Si-N and Cu at elevated temperature

All Science Journal Classification (ASJC) codes

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