Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

Shiou Ying Cheng; Hsi Jen Pan; Yung Hsin Shie; Jing Yuh Chen; Wen Lung Chang; Wei Chou Wang; Po Hung Lin; Wen Chau Liu

doi:10.1088/0268-1242/13/10/022

Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

Shiou Ying Cheng, Hsi Jen Pan, Yung Hsin Shie, Jing Yuh Chen, Wen Lung Chang, Wei Chou Wang, Po Hung Lin, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this paper, we demonstrate the qualitative influence of a δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). The results of a theoretical simulation show that the potential spike is reduced by the simultaneous employment of an appropriate setback layer and δ-doping sheet. Due to the reduction in the potential spike, a high current gain, even at a small collector current regime, and small offset voltage can be attained. Experimentally, an offset voltage as small as 55 mV and current gain of 11 at collector current of 0.5 μA are obtained without a passivation structure.

Original language	English
Pages (from-to)	1187-1192
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	13
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/13/10/022
Publication status	Published - 1998 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/13/10/022

Cite this

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title = "Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor",

abstract = "In this paper, we demonstrate the qualitative influence of a δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). The results of a theoretical simulation show that the potential spike is reduced by the simultaneous employment of an appropriate setback layer and δ-doping sheet. Due to the reduction in the potential spike, a high current gain, even at a small collector current regime, and small offset voltage can be attained. Experimentally, an offset voltage as small as 55 mV and current gain of 11 at collector current of 0.5 μA are obtained without a passivation structure.",

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T1 - Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

AU - Cheng, Shiou Ying

AU - Pan, Hsi Jen

AU - Shie, Yung Hsin

AU - Chen, Jing Yuh

AU - Chang, Wen Lung

AU - Wang, Wei Chou

AU - Lin, Po Hung

AU - Liu, Wen Chau

PY - 1998/10/1

Y1 - 1998/10/1

N2 - In this paper, we demonstrate the qualitative influence of a δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). The results of a theoretical simulation show that the potential spike is reduced by the simultaneous employment of an appropriate setback layer and δ-doping sheet. Due to the reduction in the potential spike, a high current gain, even at a small collector current regime, and small offset voltage can be attained. Experimentally, an offset voltage as small as 55 mV and current gain of 11 at collector current of 0.5 μA are obtained without a passivation structure.

AB - In this paper, we demonstrate the qualitative influence of a δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). The results of a theoretical simulation show that the potential spike is reduced by the simultaneous employment of an appropriate setback layer and δ-doping sheet. Due to the reduction in the potential spike, a high current gain, even at a small collector current regime, and small offset voltage can be attained. Experimentally, an offset voltage as small as 55 mV and current gain of 11 at collector current of 0.5 μA are obtained without a passivation structure.

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Influence of the δ-doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

Abstract

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