Influence of the formation of the second phase in ZnOGa nanowire systems

Cheng Liang Hsu; Yan Ru Lin; Shoou Jinn Chang; Tsung Heng Lu; Tzer Shen Lin; Song Yeu Tsai; I. Cherng Chen

doi:10.1149/1.2171826

Influence of the formation of the second phase in ZnOGa nanowire systems

Cheng Liang Hsu, Yan Ru Lin, Shoou Jinn Chang, Tsung Heng Lu, Tzer Shen Lin, Song Yeu Tsai, I. Cherng Chen

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This investigation describes the synthesis and formation of the second phase of high-density arrays of vertically aligned ZnO:Ga nanowires on ZnO/glass substrates at 600°C. As the concentration of the Ga is increased, the nanowire became shorter without any change in its diameter. The formation of the second phase, ZnGa2 O4 (JCPDS no. 38-1240), was verified by X-ray diffraction and high-resolution lattice imagery, even though the concentration of the Ga was only 3.5 atom %. The formation of the second compound substantially influenced the physical properties of the nanowire.

Original language	English
Pages (from-to)	G333-G336
Journal	Journal of the Electrochemical Society
Volume	153
Issue number	4
DOIs	https://doi.org/10.1149/1.2171826
Publication status	Published - 2006 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2171826

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title = "Influence of the formation of the second phase in ZnOGa nanowire systems",

abstract = "This investigation describes the synthesis and formation of the second phase of high-density arrays of vertically aligned ZnO:Ga nanowires on ZnO/glass substrates at 600°C. As the concentration of the Ga is increased, the nanowire became shorter without any change in its diameter. The formation of the second phase, ZnGa2 O4 (JCPDS no. 38-1240), was verified by X-ray diffraction and high-resolution lattice imagery, even though the concentration of the Ga was only 3.5 atom %. The formation of the second compound substantially influenced the physical properties of the nanowire.",

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AU - Hsu, Cheng Liang

AU - Lin, Yan Ru

AU - Chang, Shoou Jinn

AU - Lu, Tsung Heng

AU - Lin, Tzer Shen

AU - Tsai, Song Yeu

AU - Chen, I. Cherng

PY - 2006/4

Y1 - 2006/4

N2 - This investigation describes the synthesis and formation of the second phase of high-density arrays of vertically aligned ZnO:Ga nanowires on ZnO/glass substrates at 600°C. As the concentration of the Ga is increased, the nanowire became shorter without any change in its diameter. The formation of the second phase, ZnGa2 O4 (JCPDS no. 38-1240), was verified by X-ray diffraction and high-resolution lattice imagery, even though the concentration of the Ga was only 3.5 atom %. The formation of the second compound substantially influenced the physical properties of the nanowire.

AB - This investigation describes the synthesis and formation of the second phase of high-density arrays of vertically aligned ZnO:Ga nanowires on ZnO/glass substrates at 600°C. As the concentration of the Ga is increased, the nanowire became shorter without any change in its diameter. The formation of the second phase, ZnGa2 O4 (JCPDS no. 38-1240), was verified by X-ray diffraction and high-resolution lattice imagery, even though the concentration of the Ga was only 3.5 atom %. The formation of the second compound substantially influenced the physical properties of the nanowire.

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JO - Journal of the Electrochemical Society

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Influence of the formation of the second phase in ZnOGa nanowire systems

Abstract

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