Influence of the formation of the second phase in ZnOGa nanowire systems

Cheng Liang Hsu, Yan Ru Lin, Shoou Jinn Chang, Tsung Heng Lu, Tzer Shen Lin, Song Yeu Tsai, I. Cherng Chen

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

This investigation describes the synthesis and formation of the second phase of high-density arrays of vertically aligned ZnO:Ga nanowires on ZnO/glass substrates at 600°C. As the concentration of the Ga is increased, the nanowire became shorter without any change in its diameter. The formation of the second phase, ZnGa2 O4 (JCPDS no. 38-1240), was verified by X-ray diffraction and high-resolution lattice imagery, even though the concentration of the Ga was only 3.5 atom %. The formation of the second compound substantially influenced the physical properties of the nanowire.

Original languageEnglish
Pages (from-to)G333-G336
JournalJournal of the Electrochemical Society
Volume153
Issue number4
DOIs
Publication statusPublished - 2006 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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