Abstract
This investigation describes the synthesis and formation of the second phase of high-density arrays of vertically aligned ZnO:Ga nanowires on ZnO/glass substrates at 600°C. As the concentration of the Ga is increased, the nanowire became shorter without any change in its diameter. The formation of the second phase, ZnGa2 O4 (JCPDS no. 38-1240), was verified by X-ray diffraction and high-resolution lattice imagery, even though the concentration of the Ga was only 3.5 atom %. The formation of the second compound substantially influenced the physical properties of the nanowire.
Original language | English |
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Pages (from-to) | G333-G336 |
Journal | Journal of the Electrochemical Society |
Volume | 153 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2006 Apr |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry