Influence of the potential spike on heterostructure-emitter bipolar transistor

Wen-Chau Liu, Wen Shiung Lour

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The influence of potential spike on the transport properties of heterostructure-emitter bipolar transistor (HEBT) has been demonstrated. The potential spike is attributed primarily to the extended depletion region adjacent the p+ GaAs base layer. Due to the existence of potential spike, the electrical properties including conducting current, current gain, and offset voltage, etc., are degraded seriously. The knee-shaped characteristics and strong reachthrough effect are observed. Consequently, the design of the structural parameters, such as GaAs emitter (collector) width adjacent p + base, plays an important role of high-performance HEBT devices.

Original languageEnglish
Pages (from-to)1063-1066
Number of pages4
JournalJournal of Applied Physics
Volume69
Issue number2
DOIs
Publication statusPublished - 1991 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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