Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors

Pei Chuen Jiang; Chih Kun Yen; J. S. Chen

doi:10.1016/j.jallcom.2007.09.072

Influence of thickness on the material characteristics of reactively sputtered W₂N layer and electrical properties of W/W₂N/SiO₂/Si capacitors

Pei Chuen Jiang
, Chih Kun Yen
, J. S. Chen

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The material characteristics of W₂N layer and electrical properties of W/W₂N/SiO₂/Si metal-oxide-semiconductor (MOS) capacitors with different W₂N thickness upon annealing in N₂ + H₂ ambient at 500 °C for 20 min are investigated. The nitrogen concentration of W₂N for the W/W₂N stack with thin W₂N layer (≤10 nm) is lower than that for the W/W₂N stack with thick W₂N layer (≥15 nm). In addition, the crystallinity of W₂N in the W/W₂N (15 nm) stack is better than that in the W/W₂N (10 nm) stack. For all capacitors, the oxide charges decrease significantly after annealing and the amount of oxide charges is independent of the W₂N thickness. However, the work function (Φ_m) of the W/W₂N (≤10 nm) stack (∼4.6 eV) is smaller than that of W/W₂N (15 nm) stack (∼5.0 eV). The Φ_m of W/W₂N (15 nm) stack is close to that of W₂N single layer. After annealing, the Φ_m of W/W₂N (15 nm) stack and W₂N single layer decrease, especially for the W₂N single layer. But for the W/W₂N (≤10 nm) stack, the Φ_m increases after annealing.

Original language	English
Pages (from-to)	522-527
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	463
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2007.09.072
Publication status	Published - 2008 Sept 8

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2007.09.072

Cite this

@article{764cd23d9bfe457c9664599f95a9d273,

title = "Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors",

abstract = "The material characteristics of W2N layer and electrical properties of W/W2N/SiO2/Si metal-oxide-semiconductor (MOS) capacitors with different W2N thickness upon annealing in N2 + H2 ambient at 500 °C for 20 min are investigated. The nitrogen concentration of W2N for the W/W2N stack with thin W2N layer (≤10 nm) is lower than that for the W/W2N stack with thick W2N layer (≥15 nm). In addition, the crystallinity of W2N in the W/W2N (15 nm) stack is better than that in the W/W2N (10 nm) stack. For all capacitors, the oxide charges decrease significantly after annealing and the amount of oxide charges is independent of the W2N thickness. However, the work function (Φm) of the W/W2N (≤10 nm) stack (∼4.6 eV) is smaller than that of W/W2N (15 nm) stack (∼5.0 eV). The Φm of W/W2N (15 nm) stack is close to that of W2N single layer. After annealing, the Φm of W/W2N (15 nm) stack and W2N single layer decrease, especially for the W2N single layer. But for the W/W2N (≤10 nm) stack, the Φm increases after annealing.",

author = "Jiang, \{Pei Chuen\} and Yen, \{Chih Kun\} and Chen, \{J. S.\}",

note = "Funding Information: The authors gratefully appreciate the financial support from the National Science Council of Taiwan, ROC (grant no. NSC 96-2628-E-006-012-MY3). They are greatly indebted to the Taiwan Semiconductor Manufacturing Company and would also like to acknowledge the financial support from Applied Materials, Taiwan.",

year = "2008",

month = sep,

day = "8",

doi = "10.1016/j.jallcom.2007.09.072",

language = "English",

volume = "463",

pages = "522--527",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier BV",

number = "1-2",

}

TY - JOUR

T1 - Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors

AU - Jiang, Pei Chuen

AU - Yen, Chih Kun

AU - Chen, J. S.

N1 - Funding Information: The authors gratefully appreciate the financial support from the National Science Council of Taiwan, ROC (grant no. NSC 96-2628-E-006-012-MY3). They are greatly indebted to the Taiwan Semiconductor Manufacturing Company and would also like to acknowledge the financial support from Applied Materials, Taiwan.

PY - 2008/9/8

Y1 - 2008/9/8

N2 - The material characteristics of W2N layer and electrical properties of W/W2N/SiO2/Si metal-oxide-semiconductor (MOS) capacitors with different W2N thickness upon annealing in N2 + H2 ambient at 500 °C for 20 min are investigated. The nitrogen concentration of W2N for the W/W2N stack with thin W2N layer (≤10 nm) is lower than that for the W/W2N stack with thick W2N layer (≥15 nm). In addition, the crystallinity of W2N in the W/W2N (15 nm) stack is better than that in the W/W2N (10 nm) stack. For all capacitors, the oxide charges decrease significantly after annealing and the amount of oxide charges is independent of the W2N thickness. However, the work function (Φm) of the W/W2N (≤10 nm) stack (∼4.6 eV) is smaller than that of W/W2N (15 nm) stack (∼5.0 eV). The Φm of W/W2N (15 nm) stack is close to that of W2N single layer. After annealing, the Φm of W/W2N (15 nm) stack and W2N single layer decrease, especially for the W2N single layer. But for the W/W2N (≤10 nm) stack, the Φm increases after annealing.

AB - The material characteristics of W2N layer and electrical properties of W/W2N/SiO2/Si metal-oxide-semiconductor (MOS) capacitors with different W2N thickness upon annealing in N2 + H2 ambient at 500 °C for 20 min are investigated. The nitrogen concentration of W2N for the W/W2N stack with thin W2N layer (≤10 nm) is lower than that for the W/W2N stack with thick W2N layer (≥15 nm). In addition, the crystallinity of W2N in the W/W2N (15 nm) stack is better than that in the W/W2N (10 nm) stack. For all capacitors, the oxide charges decrease significantly after annealing and the amount of oxide charges is independent of the W2N thickness. However, the work function (Φm) of the W/W2N (≤10 nm) stack (∼4.6 eV) is smaller than that of W/W2N (15 nm) stack (∼5.0 eV). The Φm of W/W2N (15 nm) stack is close to that of W2N single layer. After annealing, the Φm of W/W2N (15 nm) stack and W2N single layer decrease, especially for the W2N single layer. But for the W/W2N (≤10 nm) stack, the Φm increases after annealing.

UR - https://www.scopus.com/pages/publications/48949118497

UR - https://www.scopus.com/pages/publications/48949118497#tab=citedBy

U2 - 10.1016/j.jallcom.2007.09.072

DO - 10.1016/j.jallcom.2007.09.072

M3 - Article

AN - SCOPUS:48949118497

SN - 0925-8388

VL - 463

SP - 522

EP - 527

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Influence of thickness on the material characteristics of reactively sputtered W₂N layer and electrical properties of W/W₂N/SiO₂/Si capacitors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this