Influence of UV illumination condition on NDR performance of porous silicon superlattice

Shui-Jinn Wang, J. C. Lin, H. Y. Tsai

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The authors report on the influence of the UV illumination condition on the negative differential resistance (NDR) performance of a porous silicon superlattice. It is found that the peak-to-valley current ratio (PVCR) can be improved by increasing the off-time of the illumination in each period.

Original languageEnglish
Pages (from-to)1618-1619
Number of pages2
JournalElectronics Letters
Volume32
Issue number17
DOIs
Publication statusPublished - 1996 Jan 1

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Porous silicon
Lighting

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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Influence of UV illumination condition on NDR performance of porous silicon superlattice. / Wang, Shui-Jinn; Lin, J. C.; Tsai, H. Y.

In: Electronics Letters, Vol. 32, No. 17, 01.01.1996, p. 1618-1619.

Research output: Contribution to journalArticle

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