TY - JOUR
T1 - Influence of V2O5 additions to Ba(Mg 1/3Ta2/3)O3 ceramics on sintering behavior and microwave dielectric properties
AU - Huang, Cheng Liang
AU - Chiang, Kuo Hau
AU - Chuang, She Cher
N1 - Funding Information:
This work was supported by the National Science Council of the Republic of China under grant NSC90-2216-E-006-058.
PY - 2004/4/2
Y1 - 2004/4/2
N2 - The microstructures and the microwave dielectric properties of barium magnesium tantalate ceramics prepared by conventional mixed oxide route have been investigated. The prepared Ba(Mg1/3Ta2/3)O 3 exhibited a mixture of cubic perovskite and a hexagonal superstructure with Mg and Ta showing 1:2 order in the B-site. It is found that low level doping of V2O5 (up to 0.5wt.%) can significantly improve densification of the specimens and their microwave dielectric properties. The density of doped Ba(Mg1/3Ta 2/3)O3 ceramics can be increased beyond 95% of its theoretical value by 1500°C-sintering, which is caused by the liquid-phase effect of V2O5 addition. The detected second phase Ta 2O5 was mainly the result of V5+ substitution in the ceramics. Dielectric constant (εr) and temperature coefficient of resonant frequency (τf) were not significantly affected, while the unloaded quality factors Q were effectively promoted by V2O5 addition due to the increase in B-site ordering. The εr value of 24.1, Q × f value of 149,000 (at 10GHz) and τf value of 7.2ppm/°C were obtained for Ba(Mg 1/3Ta2/3)O3 ceramics with 0.25wt.% V 2O5 addition sintered at 1500°C for 3h.
AB - The microstructures and the microwave dielectric properties of barium magnesium tantalate ceramics prepared by conventional mixed oxide route have been investigated. The prepared Ba(Mg1/3Ta2/3)O 3 exhibited a mixture of cubic perovskite and a hexagonal superstructure with Mg and Ta showing 1:2 order in the B-site. It is found that low level doping of V2O5 (up to 0.5wt.%) can significantly improve densification of the specimens and their microwave dielectric properties. The density of doped Ba(Mg1/3Ta 2/3)O3 ceramics can be increased beyond 95% of its theoretical value by 1500°C-sintering, which is caused by the liquid-phase effect of V2O5 addition. The detected second phase Ta 2O5 was mainly the result of V5+ substitution in the ceramics. Dielectric constant (εr) and temperature coefficient of resonant frequency (τf) were not significantly affected, while the unloaded quality factors Q were effectively promoted by V2O5 addition due to the increase in B-site ordering. The εr value of 24.1, Q × f value of 149,000 (at 10GHz) and τf value of 7.2ppm/°C were obtained for Ba(Mg 1/3Ta2/3)O3 ceramics with 0.25wt.% V 2O5 addition sintered at 1500°C for 3h.
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U2 - 10.1016/j.materresbull.2003.12.008
DO - 10.1016/j.materresbull.2003.12.008
M3 - Article
AN - SCOPUS:1642276115
SN - 0025-5408
VL - 39
SP - 629
EP - 636
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 4-5
ER -