Influence of working pressure on structural and optoelectronic properties of Al-doped ZnO thin films

Chien Hsun Chu, Hung Wei Wu, Jow Lay Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, we investigated the electrical, optical and structural properties of aluminum-doped ZnO (AZO) thin films by RF magnetron sputtering under different working pressure of 5 - 40 mTorr. Optimization of the prepared thin films shows low resistivity of 6.11 × 10-4 ?-cm, mobility of 4.295 cm2/V-s and carrier concentration of 3.277 × 1020 cm-3 at working pressure of 5 mTorr. The maximum transmittance of 98.99 % for wavelengths above 600 nm and Haacke figure of merit (FOM) are 6.44 × 10-3 ?-1 with working pressure of 5 mTorr. These results indicate that AZO thin films are a promising high conductivity transparent electrode scheme for solar cells and various displays applications.

Original languageEnglish
Title of host publicationProceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014
PublisherIEEE Computer Society
Pages569-572
Number of pages4
ISBN (Print)9781479952779
DOIs
Publication statusPublished - 2014 Jan 1
Event2nd International Symposium on Computer, Consumer and Control, IS3C 2014 - Taichung, Taiwan
Duration: 2014 Jun 102014 Jun 12

Publication series

NameProceedings - 2014 International Symposium on Computer, Consumer and Control, IS3C 2014

Other

Other2nd International Symposium on Computer, Consumer and Control, IS3C 2014
CountryTaiwan
CityTaichung
Period14-06-1014-06-12

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Control and Systems Engineering

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