TY - JOUR
T1 - Influence of Zr additives on the microstructure and oxidation resistance of Cu(Zr) thin films
AU - Liu, C. J.
AU - Chen, J. S.
N1 - Funding Information:
The authors gratefully acknowledge the financial support from the National Science Council of Taiwan, Republic of China (Grant No. NSC-92-2216-E-006-022).
PY - 2005/2
Y1 - 2005/2
N2 - In this work, the microstructure and oxidation resistance of pure Cu, Cu(0.2 at.% Zr) and Cu(2.5 at.% Zr) alloy films deposited on SiO2/Si by sputtering were explored. Upon annealing, the Zr additives diffused to the free surface and reacted with the residual oxygen in the vacuum system. An additional ZrO2 layer formed and covered the Cu(2.5 at.% Zr) film surface after annealing at 700 °C for 30 min. Simultaneously, of the three films, the Cu(2.5 at.% Zr) film exhibited the highest degree of Cu(111) preferred orientation and the lowest degree of void growth upon annealing. Additionally, the Cu(2.5 at.% Zr) film pre-annealed at 700 °C showed a superior oxidation resistance when annealed at 200 °C in air for 15 min. Microstructure and oxidation resistance of Cu(Zr) alloy films were clearly affected by the ZrO2 layer formed via the segregation of Zr additives, and the connection is discussed.
AB - In this work, the microstructure and oxidation resistance of pure Cu, Cu(0.2 at.% Zr) and Cu(2.5 at.% Zr) alloy films deposited on SiO2/Si by sputtering were explored. Upon annealing, the Zr additives diffused to the free surface and reacted with the residual oxygen in the vacuum system. An additional ZrO2 layer formed and covered the Cu(2.5 at.% Zr) film surface after annealing at 700 °C for 30 min. Simultaneously, of the three films, the Cu(2.5 at.% Zr) film exhibited the highest degree of Cu(111) preferred orientation and the lowest degree of void growth upon annealing. Additionally, the Cu(2.5 at.% Zr) film pre-annealed at 700 °C showed a superior oxidation resistance when annealed at 200 °C in air for 15 min. Microstructure and oxidation resistance of Cu(Zr) alloy films were clearly affected by the ZrO2 layer formed via the segregation of Zr additives, and the connection is discussed.
UR - http://www.scopus.com/inward/record.url?scp=28044432548&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28044432548&partnerID=8YFLogxK
U2 - 10.1557/JMR.2005.0068
DO - 10.1557/JMR.2005.0068
M3 - Article
AN - SCOPUS:28044432548
SN - 0884-2914
VL - 20
SP - 496
EP - 503
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 2
ER -