SiGe-Si doped channel field-effect-transistors with different positions of δ layers in SiGe wells have been proposed and fabricated. High forward gate to drain turn-on voltage (> 0.87 V) and reverse breakdown voltage up to 25 V was obtained for center and bottom δ-doped channel devices. For device structures with the same 1 × 100 μm2 gate, center δ-doped channel device display the best dc maximum extrinsic transconductance of 22.1 mS/mm. Compared with conventional Si-SiGe MODFETs, center δ-doped channel device exhibits improved gate voltage swings as wide as 3 V due to the better carrier confinement and the absence of parallel conduction, which is promising to provide an additional degree of freedom for Si-based device applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering