Influences of δ-doping position on the characteristics of SiGe-Si DCFETs

San Lein Wu, Pei Wei Chien, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

Abstract

SiGe-Si doped channel field-effect-transistors with different positions of δ layers in SiGe wells have been proposed and fabricated. High forward gate to drain turn-on voltage (> 0.87 V) and reverse breakdown voltage up to 25 V was obtained for center and bottom δ-doped channel devices. For device structures with the same 1 × 100 μm2 gate, center δ-doped channel device display the best dc maximum extrinsic transconductance of 22.1 mS/mm. Compared with conventional Si-SiGe MODFETs, center δ-doped channel device exhibits improved gate voltage swings as wide as 3 V due to the better carrier confinement and the absence of parallel conduction, which is promising to provide an additional degree of freedom for Si-based device applications.

Original languageEnglish
Pages (from-to)477-479
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number7
DOIs
Publication statusPublished - 2004 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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