Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

Shui Jinn Wang, Jia Chuan Lin, Wan Rone Liou, Mei Ling Yeh, Ying Che Luo, Ching Yuan Cheng

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

Original languageEnglish
Pages (from-to)3858-3862
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number7
DOIs
Publication statusPublished - 1996 Jul

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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