Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

Shui Jinn Wang; Jia Chuan Lin; Wan Rone Liou; Mei Ling Yeh; Ying Che Luo; Ching Yuan Cheng

doi:10.1143/jjap.35.3858

Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

Shui Jinn Wang, Jia Chuan Lin, Wan Rone Liou, Mei Ling Yeh, Ying Che Luo, Ching Yuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

Original language	English
Pages (from-to)	3858-3862
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	7
DOIs	https://doi.org/10.1143/jjap.35.3858
Publication status	Published - 1996 Jul

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Wang, S. J., Lin, J. C., Liou, W. R., Yeh, M. L., Luo, Y. C., & Cheng, C. Y. (1996). Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(7), 3858-3862. https://doi.org/10.1143/jjap.35.3858

Wang, Shui Jinn ; Lin, Jia Chuan ; Liou, Wan Rone ; Yeh, Mei Ling ; Luo, Ying Che ; Cheng, Ching Yuan. / Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1996 ; Vol. 35, No. 7. pp. 3858-3862.

@article{c433cc062d2846c59faefbc7b69ce37a,

title = "Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes",

abstract = "The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.",

author = "Wang, {Shui Jinn} and Lin, {Jia Chuan} and Liou, {Wan Rone} and Yeh, {Mei Ling} and Luo, {Ying Che} and Cheng, {Ching Yuan}",

year = "1996",

month = jul,

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language = "English",

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pages = "3858--3862",

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Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes. / Wang, Shui Jinn; Lin, Jia Chuan; Liou, Wan Rone; Yeh, Mei Ling; Luo, Ying Che; Cheng, Ching Yuan.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 7, 07.1996, p. 3858-3862.

Research output: Contribution to journal › Article › peer-review

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AU - Lin, Jia Chuan

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AU - Yeh, Mei Ling

AU - Luo, Ying Che

AU - Cheng, Ching Yuan

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AB - The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

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