Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

Shui Jinn Wang; Jia Chuan Lin; Wan Rone Liou; Mei Ling Yeh; Ying Che Luo; Ching Yuan Cheng

doi:10.1143/jjap.35.3858

Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

Shui Jinn Wang, Jia Chuan Lin, Wan Rone Liou, Mei Ling Yeh, Ying Che Luo, Ching Yuan Cheng

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

Original language	English
Pages (from-to)	3858-3862
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	35
Issue number	7
DOIs	https://doi.org/10.1143/jjap.35.3858
Publication status	Published - 1996 Jul

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes",

abstract = "The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.",

author = "Wang, {Shui Jinn} and Lin, {Jia Chuan} and Liou, {Wan Rone} and Yeh, {Mei Ling} and Luo, {Ying Che} and Cheng, {Ching Yuan}",

year = "1996",

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language = "English",

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T1 - Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

AU - Wang, Shui Jinn

AU - Lin, Jia Chuan

AU - Liou, Wan Rone

AU - Yeh, Mei Ling

AU - Luo, Ying Che

AU - Cheng, Ching Yuan

PY - 1996/7

Y1 - 1996/7

N2 - The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

AB - The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 7

ER -

Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

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