Abstract
The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (≥ 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.
Original language | English |
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Pages (from-to) | 3858-3862 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics |
Volume | 35 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1996 Jul |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)