TY - JOUR
T1 - Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
AU - Lai, Po Hsien
AU - Chen, Chun Wei
AU - Kao, Chung I.
AU - Fu, Ssu I.
AU - Tsai, Yan Ying
AU - Hung, Ching Wen
AU - Yen, Chih Hung
AU - Chuang, Hung Ming
AU - Cheng, Shiou Ying
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received July 20, 2005; revised October 11, 2005. This work was supported by the National Science Council of Taiwan, R.O.C., under Contract NSC-94–2215-E-006-060 and Contract 94–2215-E-197-002. The review of this paper was arranged by Editor M. Anwar.
PY - 2006/1
Y1 - 2006/1
N2 - The influences of (NH4)2Sx treatment on an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Upon the sulfur passivation, the studied device exhibits better temperature-dependent dc and microwave characteristics. Experimentally, for a 1 × 100 μm2 gate/dimension PHEMT with sulfur passivation, the higher gate/drain breakdown voltage of 36.4 (21.5) V, higher turn-on voltage of 0.994 (0.69) V, lower gate leakage current of 0.6 (571) μA/mm at VGD = -22 V, improved threshold voltage of -1.62 (-1.71) V, higher maximum transconductance of 240 (211) mS/mm with 348 (242) mA/mm broad operating regime (> 0.9gm,max), and lower output conductance of 0.51 (0.53) mS/mm are obtained, respectively, at 300 (510) K. The corresponding unity current gain cutoff frequency fT (maximum oscillation frequency fmax) are 22.2 (87.9) and 19.5 (59.3) GHz at 250 and 400 K, respectively, with considerably broad operating regimes (> 0.8 fT, fmax) larger than 455 mA/mm. Moreover, the relatively lower variations of device performances over wide temperature range (300-510 K) are observed.
AB - The influences of (NH4)2Sx treatment on an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Upon the sulfur passivation, the studied device exhibits better temperature-dependent dc and microwave characteristics. Experimentally, for a 1 × 100 μm2 gate/dimension PHEMT with sulfur passivation, the higher gate/drain breakdown voltage of 36.4 (21.5) V, higher turn-on voltage of 0.994 (0.69) V, lower gate leakage current of 0.6 (571) μA/mm at VGD = -22 V, improved threshold voltage of -1.62 (-1.71) V, higher maximum transconductance of 240 (211) mS/mm with 348 (242) mA/mm broad operating regime (> 0.9gm,max), and lower output conductance of 0.51 (0.53) mS/mm are obtained, respectively, at 300 (510) K. The corresponding unity current gain cutoff frequency fT (maximum oscillation frequency fmax) are 22.2 (87.9) and 19.5 (59.3) GHz at 250 and 400 K, respectively, with considerably broad operating regimes (> 0.8 fT, fmax) larger than 455 mA/mm. Moreover, the relatively lower variations of device performances over wide temperature range (300-510 K) are observed.
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U2 - 10.1109/TED.2005.860654
DO - 10.1109/TED.2005.860654
M3 - Article
AN - SCOPUS:33744787828
SN - 0018-9383
VL - 53
SP - 1
EP - 7
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
ER -