Influences of surface reconstruction on the atomic-layer-deposited HfO 2 / Al2 O3 /n-InAs metal-oxide-semiconductor capacitors

Hau Yu Lin, San Lein Wu, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, You Ru Lin, Shoou Jinn Chang, Tai Bor Wu

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19 Citations (Scopus)


We report the characteristics of HfO2 / Al2 O 3 /n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2 / Al2 O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4) -surface sample, improvements of capacitance-voltage characteristics for (1×1) -surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2 O3 /InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1) -surface sample tends to avoid the oxidization process and become less pinning.

Original languageEnglish
Article number123509
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2011 Mar 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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