We report the characteristics of HfO2 / Al2 O 3 /n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2 / Al2 O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4) -surface sample, improvements of capacitance-voltage characteristics for (1×1) -surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2 O3 /InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1) -surface sample tends to avoid the oxidization process and become less pinning.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)