Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

Chun Yuan Chen; Ssu I. Fu; Shiou Ying Cheng; Chi Yuan Chang; Ching Hsiu Tsai; Chih Hung Yen; Sheng Fu Tsai; Rong Chau Liu; Wen Chau Liu

doi:10.1109/TED.2004.839121

Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

Chun Yuan Chen, Ssu I. Fu, Shiou Ying Cheng, Chi Yuan Chang, Ching Hsiu Tsai, Chih Hung Yen, Sheng Fu Tsai, Rong Chau Liu, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The temperature-dependent dc characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment are systematically studied and demonstrated. Due to the use of sulfur passivation, the series resistance of base-emitter junction of studied device can be effectively reduced. In addition, the device with sulfur treatment can be operated under ultra low collector current regimes (I _C ≤ 10^-11 A). Experimentally, a long-time sulfur treatment is not appropriate. In this work, the studied device with sulfur treatment for 15 rain is a good choice. Furthermore, at measured temperature (298 K-398 K), the studied device with sulfur treatment can reduce collector-emitter offset voltage and the impact of emitter size effect. Moreover, as the temperature is increased, the device with sulfur treatment will exhibit higher dc current gain and more stable temperature-dependent performances. This will extend the application regimes of the studied device in low-power and communication systems.

Original language	English
Pages (from-to)	1963-1971
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	12
DOIs	https://doi.org/10.1109/TED.2004.839121
Publication status	Published - 2004 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2004.839121

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@article{346d4a39a5cc48a593d6923270032fd9,

title = "Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs",

abstract = "The temperature-dependent dc characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment are systematically studied and demonstrated. Due to the use of sulfur passivation, the series resistance of base-emitter junction of studied device can be effectively reduced. In addition, the device with sulfur treatment can be operated under ultra low collector current regimes (I C ≤ 10-11 A). Experimentally, a long-time sulfur treatment is not appropriate. In this work, the studied device with sulfur treatment for 15 rain is a good choice. Furthermore, at measured temperature (298 K-398 K), the studied device with sulfur treatment can reduce collector-emitter offset voltage and the impact of emitter size effect. Moreover, as the temperature is increased, the device with sulfur treatment will exhibit higher dc current gain and more stable temperature-dependent performances. This will extend the application regimes of the studied device in low-power and communication systems.",

author = "Chen, {Chun Yuan} and Fu, {Ssu I.} and Cheng, {Shiou Ying} and Chang, {Chi Yuan} and Tsai, {Ching Hsiu} and Yen, {Chih Hung} and Tsai, {Sheng Fu} and Liu, {Rong Chau} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received March 30, 2004; revised September 27, 2004. This work was supported in part by the National Science Council (NSC), Taiwan, R.O.C., under Contracts NSC 92-2218-E006-032 and NSC 92-2218-E197-003. The review of this paper was arranged by Editor M. Anwar.",

year = "2004",

month = dec,

doi = "10.1109/TED.2004.839121",

language = "English",

volume = "51",

pages = "1963--1971",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

AU - Chen, Chun Yuan

AU - Fu, Ssu I.

AU - Cheng, Shiou Ying

AU - Chang, Chi Yuan

AU - Tsai, Ching Hsiu

AU - Yen, Chih Hung

AU - Tsai, Sheng Fu

AU - Liu, Rong Chau

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received March 30, 2004; revised September 27, 2004. This work was supported in part by the National Science Council (NSC), Taiwan, R.O.C., under Contracts NSC 92-2218-E006-032 and NSC 92-2218-E197-003. The review of this paper was arranged by Editor M. Anwar.

PY - 2004/12

Y1 - 2004/12

N2 - The temperature-dependent dc characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment are systematically studied and demonstrated. Due to the use of sulfur passivation, the series resistance of base-emitter junction of studied device can be effectively reduced. In addition, the device with sulfur treatment can be operated under ultra low collector current regimes (I C ≤ 10-11 A). Experimentally, a long-time sulfur treatment is not appropriate. In this work, the studied device with sulfur treatment for 15 rain is a good choice. Furthermore, at measured temperature (298 K-398 K), the studied device with sulfur treatment can reduce collector-emitter offset voltage and the impact of emitter size effect. Moreover, as the temperature is increased, the device with sulfur treatment will exhibit higher dc current gain and more stable temperature-dependent performances. This will extend the application regimes of the studied device in low-power and communication systems.

AB - The temperature-dependent dc characteristics of InGaP-GaAs heterojunction bipolar transistors with and without sulfur treatment are systematically studied and demonstrated. Due to the use of sulfur passivation, the series resistance of base-emitter junction of studied device can be effectively reduced. In addition, the device with sulfur treatment can be operated under ultra low collector current regimes (I C ≤ 10-11 A). Experimentally, a long-time sulfur treatment is not appropriate. In this work, the studied device with sulfur treatment for 15 rain is a good choice. Furthermore, at measured temperature (298 K-398 K), the studied device with sulfur treatment can reduce collector-emitter offset voltage and the impact of emitter size effect. Moreover, as the temperature is increased, the device with sulfur treatment will exhibit higher dc current gain and more stable temperature-dependent performances. This will extend the application regimes of the studied device in low-power and communication systems.

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JO - IEEE Transactions on Electron Devices

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Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

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