Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

W. L. Chang, H. J. Pan, W. C. Wang, K. B. Thei, W. S. Lour, W. C. Liu

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1 Citation (Scopus)

Abstract

The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.

Original languageEnglish
Pages (from-to)887-891
Number of pages5
JournalSemiconductor Science and Technology
Volume14
Issue number10
DOIs
Publication statusPublished - 1999 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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