Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

W. L. Chang, H. J. Pan, W. C. Wang, K. B. Thei, W. S. Lour, Wen-Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.

Original languageEnglish
Pages (from-to)887-891
Number of pages5
JournalSemiconductor Science and Technology
Volume14
Issue number10
DOIs
Publication statusPublished - 1999 Oct

Fingerprint

mesas
Leakage currents
Transistors
transistors
radio frequencies
High electron mobility transistors
leakage
Electric breakdown
Capacitance
high electron mobility transistors
electrical faults
sliding
capacitance
direct current

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Chang, W. L. ; Pan, H. J. ; Wang, W. C. ; Thei, K. B. ; Lour, W. S. ; Liu, Wen-Chau. / Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors. In: Semiconductor Science and Technology. 1999 ; Vol. 14, No. 10. pp. 887-891.
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Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors. / Chang, W. L.; Pan, H. J.; Wang, W. C.; Thei, K. B.; Lour, W. S.; Liu, Wen-Chau.

In: Semiconductor Science and Technology, Vol. 14, No. 10, 10.1999, p. 887-891.

Research output: Contribution to journalArticle

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