Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

W. L. Chang; H. J. Pan; W. C. Wang; K. B. Thei; W. S. Lour; W. C. Liu

doi:10.1088/0268-1242/14/10/301

Influences of the mesa-sidewall effect on Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic transistors

W. L. Chang, H. J. Pan, W. C. Wang, K. B. Thei, W. S. Lour, W. C. Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.

Original language	English
Pages (from-to)	887-891
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	14
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/14/10/301
Publication status	Published - 1999 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/14/10/301

Cite this

@article{5ef39c8dd1eb45c581a3b8ed3ba8732d,

title = "Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors",

abstract = "The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.",

author = "Chang, {W. L.} and Pan, {H. J.} and Wang, {W. C.} and Thei, {K. B.} and Lour, {W. S.} and Liu, {W. C.}",

year = "1999",

month = oct,

doi = "10.1088/0268-1242/14/10/301",

language = "English",

volume = "14",

pages = "887--891",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "10",

}

TY - JOUR

T1 - Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

AU - Chang, W. L.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Thei, K. B.

AU - Lour, W. S.

AU - Liu, W. C.

PY - 1999/10

Y1 - 1999/10

N2 - The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.

AB - The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.

UR - http://www.scopus.com/inward/record.url?scp=0032594732&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032594732&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/14/10/301

DO - 10.1088/0268-1242/14/10/301

M3 - Article

AN - SCOPUS:0032594732

SN - 0268-1242

VL - 14

SP - 887

EP - 891

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

ER -

Influences of the mesa-sidewall effect on Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this