The influences of the mesa-sidewall effect on direct current and radio frequency (RF) performances of Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT are investigated. The leakage current path and parasitic capacitance induced from mesa-sidewalls seriously affect the device characteristics, including excessive gate leakage current, the reduced breakdown voltage, the degraded RF current gain frequency and the increased sliding effect.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry