Influences of the mesa-sidewall effect on Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic transistors

Physics & Astronomy

• mesas 87%
• transistors 60%
• radio frequencies 43%
• leakage 41%
• high electron mobility transistors 26%
• electrical faults 24%
• sliding 23%
• capacitance 20%
• direct current 19%
• performance 11%

Chemical Compounds

• Leakage Current 100%
• Current Gain 67%
• Breakdown Voltage 56%
• Parasitic 46%

Engineering & Materials Science

• Leakage currents 81%
• Transistors 64%
• High electron mobility transistors 43%
• Electric breakdown 42%
• Capacitance 32%