CIS thin films formed on several patterned structures, etched cavities and trenches, are studied. The structural influences on CuInSe2 (CIS) film formation and film texture are reported. The X-ray diffraction (XRD) results show that as the spacing between cavities or trenches decreases, the XRD intensity ratio of CIS I(220/204) to that of I(112) increases. For a fixed spacing, CIS film formed on Mo/SLG with cavities has a higher intensity ratio than that on trenches. The surface morphology of the CIS film is also strongly influenced by the structural patterns. Substrate texturing also affects the preferred phase formation of In2Se3. Mo/SLG substrates with patterned cavities can eliminate In2Se3 (006) formation. Formation of In2Se3 (110), (202) and (300) phases can be achieved using Mo/SLG substrate with any of the patterned structures studied.