Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films

Dung-Ching Perng, Meng Shian Tsai, Po Yi Wu, Jia Feng Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CIS thin films formed on several patterned structures, etched cavities and trenches, are studied. The structural influences on CuInSe2 (CIS) film formation and film texture are reported. The X-ray diffraction (XRD) results show that as the spacing between cavities or trenches decreases, the XRD intensity ratio of CIS I(220/204) to that of I(112) increases. For a fixed spacing, CIS film formed on Mo/SLG with cavities has a higher intensity ratio than that on trenches. The surface morphology of the CIS film is also strongly influenced by the structural patterns. Substrate texturing also affects the preferred phase formation of In2Se3. Mo/SLG substrates with patterned cavities can eliminate In2Se3 (006) formation. Formation of In2Se3 (110), (202) and (300) phases can be achieved using Mo/SLG substrate with any of the patterned structures studied.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages2474-2477
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 20
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 2010 Jun 202010 Jun 25

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period10-06-2010-06-25

Fingerprint

Substrates
X ray diffraction
Texturing
Surface morphology
Textures
Thin films

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Perng, D-C., Tsai, M. S., Wu, P. Y., & Fang, J. F. (2010). Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 2474-2477). [5614748] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614748
Perng, Dung-Ching ; Tsai, Meng Shian ; Wu, Po Yi ; Fang, Jia Feng. / Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films. Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. pp. 2474-2477 (Conference Record of the IEEE Photovoltaic Specialists Conference).
@inproceedings{a3b6e80f11804dc49b91a6ae25a7b574,
title = "Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films",
abstract = "CIS thin films formed on several patterned structures, etched cavities and trenches, are studied. The structural influences on CuInSe2 (CIS) film formation and film texture are reported. The X-ray diffraction (XRD) results show that as the spacing between cavities or trenches decreases, the XRD intensity ratio of CIS I(220/204) to that of I(112) increases. For a fixed spacing, CIS film formed on Mo/SLG with cavities has a higher intensity ratio than that on trenches. The surface morphology of the CIS film is also strongly influenced by the structural patterns. Substrate texturing also affects the preferred phase formation of In2Se3. Mo/SLG substrates with patterned cavities can eliminate In2Se3 (006) formation. Formation of In2Se3 (110), (202) and (300) phases can be achieved using Mo/SLG substrate with any of the patterned structures studied.",
author = "Dung-Ching Perng and Tsai, {Meng Shian} and Wu, {Po Yi} and Fang, {Jia Feng}",
year = "2010",
month = "12",
day = "20",
doi = "10.1109/PVSC.2010.5614748",
language = "English",
isbn = "9781424458912",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "2474--2477",
booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

}

Perng, D-C, Tsai, MS, Wu, PY & Fang, JF 2010, Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614748, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2474-2477, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 10-06-20. https://doi.org/10.1109/PVSC.2010.5614748

Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films. / Perng, Dung-Ching; Tsai, Meng Shian; Wu, Po Yi; Fang, Jia Feng.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 2474-2477 5614748 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films

AU - Perng, Dung-Ching

AU - Tsai, Meng Shian

AU - Wu, Po Yi

AU - Fang, Jia Feng

PY - 2010/12/20

Y1 - 2010/12/20

N2 - CIS thin films formed on several patterned structures, etched cavities and trenches, are studied. The structural influences on CuInSe2 (CIS) film formation and film texture are reported. The X-ray diffraction (XRD) results show that as the spacing between cavities or trenches decreases, the XRD intensity ratio of CIS I(220/204) to that of I(112) increases. For a fixed spacing, CIS film formed on Mo/SLG with cavities has a higher intensity ratio than that on trenches. The surface morphology of the CIS film is also strongly influenced by the structural patterns. Substrate texturing also affects the preferred phase formation of In2Se3. Mo/SLG substrates with patterned cavities can eliminate In2Se3 (006) formation. Formation of In2Se3 (110), (202) and (300) phases can be achieved using Mo/SLG substrate with any of the patterned structures studied.

AB - CIS thin films formed on several patterned structures, etched cavities and trenches, are studied. The structural influences on CuInSe2 (CIS) film formation and film texture are reported. The X-ray diffraction (XRD) results show that as the spacing between cavities or trenches decreases, the XRD intensity ratio of CIS I(220/204) to that of I(112) increases. For a fixed spacing, CIS film formed on Mo/SLG with cavities has a higher intensity ratio than that on trenches. The surface morphology of the CIS film is also strongly influenced by the structural patterns. Substrate texturing also affects the preferred phase formation of In2Se3. Mo/SLG substrates with patterned cavities can eliminate In2Se3 (006) formation. Formation of In2Se3 (110), (202) and (300) phases can be achieved using Mo/SLG substrate with any of the patterned structures studied.

UR - http://www.scopus.com/inward/record.url?scp=78650146213&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650146213&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2010.5614748

DO - 10.1109/PVSC.2010.5614748

M3 - Conference contribution

SN - 9781424458912

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2474

EP - 2477

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

ER -

Perng D-C, Tsai MS, Wu PY, Fang JF. Influences of the substrate structure on the growth of CuInSe2 and In2Se3thin films. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 2474-2477. 5614748. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614748