Influences of thermal annealing and indium content on mechanical stresses and optoelectronic characteristics of light emitter diodes

Tei-Chen Chen, Yuh Ju Lee, Hsiang Chi Wu, Chang Hsien Ho

Research output: Contribution to journalArticle

Abstract

Light emitter diodes (LEDs) are typical layered structures composed of different film materials. During the fabrication of LEDs, the mechanical stresses induced in the thin films due to misfit in lattice constants and difference in thermal expansion coefficients between adjacent layers will lead to dislocations and defects in structures such as hillocks, cracks and voids, which will not only significantly reduce the strength of structures but also reduce the efficiency and stability of LEDs. In this article, the influences of misfit strain, dislocation and thermal stresses due to difference in thermal expansion coefficients on total mechanical stresses of multilayered heterostructures are considered. A simple and powerful modified shear lag method is proposed to evaluate the mechanical stresses in LEDs subjected to thermal annealing treatment. Moreover, the influences of quantum-well structure and indium content on the mechanical stresses and optoelectronic characteristics of LEDs are also evaluated and discussed.

Original languageEnglish
Pages (from-to)291-299
Number of pages9
JournalJournal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Volume31
Issue number2
DOIs
Publication statusPublished - 2008 Jan 1

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Optoelectronic devices
Indium
Diodes
Annealing
Thermal expansion
Thermal stress
Semiconductor quantum wells
Lattice constants
Heterojunctions
Hot Temperature
Cracks
Fabrication
Thin films
Defects

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "Light emitter diodes (LEDs) are typical layered structures composed of different film materials. During the fabrication of LEDs, the mechanical stresses induced in the thin films due to misfit in lattice constants and difference in thermal expansion coefficients between adjacent layers will lead to dislocations and defects in structures such as hillocks, cracks and voids, which will not only significantly reduce the strength of structures but also reduce the efficiency and stability of LEDs. In this article, the influences of misfit strain, dislocation and thermal stresses due to difference in thermal expansion coefficients on total mechanical stresses of multilayered heterostructures are considered. A simple and powerful modified shear lag method is proposed to evaluate the mechanical stresses in LEDs subjected to thermal annealing treatment. Moreover, the influences of quantum-well structure and indium content on the mechanical stresses and optoelectronic characteristics of LEDs are also evaluated and discussed.",
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AU - Chen, Tei-Chen

AU - Lee, Yuh Ju

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AU - Ho, Chang Hsien

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AB - Light emitter diodes (LEDs) are typical layered structures composed of different film materials. During the fabrication of LEDs, the mechanical stresses induced in the thin films due to misfit in lattice constants and difference in thermal expansion coefficients between adjacent layers will lead to dislocations and defects in structures such as hillocks, cracks and voids, which will not only significantly reduce the strength of structures but also reduce the efficiency and stability of LEDs. In this article, the influences of misfit strain, dislocation and thermal stresses due to difference in thermal expansion coefficients on total mechanical stresses of multilayered heterostructures are considered. A simple and powerful modified shear lag method is proposed to evaluate the mechanical stresses in LEDs subjected to thermal annealing treatment. Moreover, the influences of quantum-well structure and indium content on the mechanical stresses and optoelectronic characteristics of LEDs are also evaluated and discussed.

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