Infrared lasing in InN nanobelts

Ming Shien Hu; Geng Ming Hsu; Kuei Hsien Chen; Chia Ju Yu; Hsu Cheng Hsu; Li Chyong Chen; Jih Shang Hwang; Lu Sheng Hong; Yang Fang Chen

doi:10.1063/1.2714291

Infrared lasing in InN nanobelts

Ming Shien Hu, Geng Ming Hsu, Kuei Hsien Chen, Chia Ju Yu, Hsu Cheng Hsu, Li Chyong Chen, Jih Shang Hwang, Lu Sheng Hong, Yang Fang Chen

Department of Photonics

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ± (001) and ± (1 1- 0) planes. The infrared lasing action was observed at 20 K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.

Original language	English
Article number	123109
Journal	Applied Physics Letters
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.2714291
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2714291

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title = "Infrared lasing in InN nanobelts",

abstract = "Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ± (001) and ± (1 1- 0) planes. The infrared lasing action was observed at 20 K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.",

author = "Hu, {Ming Shien} and Hsu, {Geng Ming} and Chen, {Kuei Hsien} and Yu, {Chia Ju} and Hsu, {Hsu Cheng} and Chen, {Li Chyong} and Hwang, {Jih Shang} and Hong, {Lu Sheng} and Chen, {Yang Fang}",

note = "Funding Information: This research was financially supported by the Ministry of Education, Asian Office of Aerospace Research and Development under AFOSR, National Science Council of Taiwan, and Academia Sinica. The authors would like to thank S. H. Chang for fruitful discussions on random lasing. Technical support from the Academia Sinica Research Project on Nano Science and Technology is gratefully acknowledged.",

year = "2007",

doi = "10.1063/1.2714291",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Infrared lasing in InN nanobelts

AU - Hu, Ming Shien

AU - Hsu, Geng Ming

AU - Chen, Kuei Hsien

AU - Yu, Chia Ju

AU - Hsu, Hsu Cheng

AU - Chen, Li Chyong

AU - Hwang, Jih Shang

AU - Hong, Lu Sheng

AU - Chen, Yang Fang

N1 - Funding Information: This research was financially supported by the Ministry of Education, Asian Office of Aerospace Research and Development under AFOSR, National Science Council of Taiwan, and Academia Sinica. The authors would like to thank S. H. Chang for fruitful discussions on random lasing. Technical support from the Academia Sinica Research Project on Nano Science and Technology is gratefully acknowledged.

PY - 2007

Y1 - 2007

N2 - Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ± (001) and ± (1 1- 0) planes. The infrared lasing action was observed at 20 K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.

AB - Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ± (001) and ± (1 1- 0) planes. The infrared lasing action was observed at 20 K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.

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DO - 10.1063/1.2714291

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Infrared lasing in InN nanobelts

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