InGaAs-GaAs pseudomorphic heterostructure transistors prepared by MOVPE

Engineering & Materials Science

• Metallorganic vapor phase epitaxy 98%
• Heterojunctions 73%
• Doping (additives) 62%
• Transistors 48%
• Management information systems 46%
• Field effect transistors 40%
• Semiconductor quantum wells 29%
• Transconductance 22%
• Electric breakdown 21%
• Electric potential 19%

Chemical Compounds

• Current Gain 100%
• Field Effect 55%
• Surface Recombination 43%
• Transconductance 43%
• Breakdown Voltage 42%
• Voltage 40%
• Velocity 23%

Physics & Astronomy

• emitters 46%
• transistors 44%
• MIS (semiconductors) 17%
• accumulators 15%
• spike potentials 13%
• field effect transistors 12%
• transconductance 8%
• electric potential 8%
• electrical faults 7%
• high current 7%
• quantum wells 6%
• injection 5%
• saturation 5%