TY - JOUR
T1 - InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures
AU - Hsu, S. H.
AU - Su, Y. K.
AU - Chang, S. J.
AU - Chen, W. C.
AU - Tsai, H. L.
N1 - Funding Information:
Manuscript received September 2, 2005; revised November 14, 2005. This work was supported by the Center for Micro/Nano Technology Research, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 93-212-M-006-006) of Taiwan.
PY - 2006/2/1
Y1 - 2006/2/1
N2 - InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8 As cap layer doping Nd= 5 ×1016, 9 × 1016, 2 × 1017, and 6 × 1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd= 5 × 1016, 9 × 10 16, and 2 × 1017 cm-3, respectively.
AB - InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8 As cap layer doping Nd= 5 ×1016, 9 × 1016, 2 × 1017, and 6 × 1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd= 5 × 1016, 9 × 10 16, and 2 × 1017 cm-3, respectively.
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U2 - 10.1109/LPT.2005.863989
DO - 10.1109/LPT.2005.863989
M3 - Article
AN - SCOPUS:34547914331
VL - 18
SP - 547
EP - 549
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 3
ER -