InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

S. H. Hsu; Y. K. Su; S. J. Chang; W. C. Chen; H. L. Tsai

doi:10.1109/LPT.2005.863989

InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

S. H. Hsu, Y. K. Su, S. J. Chang, W. C. Chen, H. L. Tsai

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al_0.2Ga_0.8 As cap layer doping N_d= 5 ×10¹⁶, 9 × 10¹⁶, 2 × 10¹⁷, and 6 × 10¹⁷ cm^-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with N_d= 5 × 10¹⁶, 9 × 10 ¹⁶, and 2 × 10¹⁷ cm^-3, respectively.

Original language	English
Pages (from-to)	547-549
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	3
DOIs	https://doi.org/10.1109/LPT.2005.863989
Publication status	Published - 2006 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2005.863989

Fingerprint Dive into the research topics of 'InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures'. Together they form a unique fingerprint.

Cite this

@article{8efcc1e1141046ad90c9dd752bfc4d3c,

title = "InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures",

abstract = "InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8 As cap layer doping Nd= 5 ×1016, 9 × 1016, 2 × 1017, and 6 × 1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd= 5 × 1016, 9 × 10 16, and 2 × 1017 cm-3, respectively.",

author = "Hsu, {S. H.} and Su, {Y. K.} and Chang, {S. J.} and Chen, {W. C.} and Tsai, {H. L.}",

note = "Funding Information: Manuscript received September 2, 2005; revised November 14, 2005. This work was supported by the Center for Micro/Nano Technology Research, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 93-212-M-006-006) of Taiwan.",

year = "2006",

month = feb,

day = "1",

doi = "10.1109/LPT.2005.863989",

language = "English",

volume = "18",

pages = "547--549",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

AU - Hsu, S. H.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chen, W. C.

AU - Tsai, H. L.

N1 - Funding Information: Manuscript received September 2, 2005; revised November 14, 2005. This work was supported by the Center for Micro/Nano Technology Research, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 93-212-M-006-006) of Taiwan.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8 As cap layer doping Nd= 5 ×1016, 9 × 1016, 2 × 1017, and 6 × 1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd= 5 × 1016, 9 × 10 16, and 2 × 1017 cm-3, respectively.

AB - InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8 As cap layer doping Nd= 5 ×1016, 9 × 1016, 2 × 1017, and 6 × 1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd= 5 × 1016, 9 × 10 16, and 2 × 1017 cm-3, respectively.

UR - http://www.scopus.com/inward/record.url?scp=34547914331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547914331&partnerID=8YFLogxK

U2 - 10.1109/LPT.2005.863989

DO - 10.1109/LPT.2005.863989

M3 - Article

AN - SCOPUS:34547914331

VL - 18

SP - 547

EP - 549

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 3

ER -

InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this