InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures

S. H. Hsu, Y. K. Su, S. J. Chang, W. C. Chen, H. L. Tsai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8 As cap layer doping Nd= 5 ×1016, 9 × 1016, 2 × 1017, and 6 × 1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd= 5 × 1016, 9 × 10 16, and 2 × 1017 cm-3, respectively.

Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number3
DOIs
Publication statusPublished - 2006 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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