TY - JOUR
T1 - InGaAsN metal-semiconductor-metal photodetectors with transparent indium tin oxide schottky contacts
AU - Su, Yan Kuin
AU - Chen, Wei Cheng
AU - Chuang, Ricky W.
AU - Hsu, Shuo Hsien
AU - Chen, Bing Yang
PY - 2007/4/24
Y1 - 2007/4/24
N2 - GaAs-based photodetectors (PDs) draw much attention owing to several advantages, such as low fabrication cost and the mature process techniques. However, fabricating them is a difficult task for the lack of suitable absorption materials that can be coherently grown on the GaAs substrate. In this report, we provide another approach to fabricate GaAs-based PDs, in which the novel InGaAsN alloy is used as the absorption layer. Three structures of planar PDs were demonstrated using transparent indium tin oxide (ITO) contacts. The dark current of PDs were suppressed by applying the SiO2 Schottky-barrier enhancement layer, but the rough interface between the SiO 2 and InGaAsN layer limited the device characteristics. Depositing a thin layer of ITO between the SiO2 and InGaAsN layers greatly improved the interface quality and the photo current-to-dark current ratio was also increased from 1.7.7 to 45.29 under 0.5 V bias.
AB - GaAs-based photodetectors (PDs) draw much attention owing to several advantages, such as low fabrication cost and the mature process techniques. However, fabricating them is a difficult task for the lack of suitable absorption materials that can be coherently grown on the GaAs substrate. In this report, we provide another approach to fabricate GaAs-based PDs, in which the novel InGaAsN alloy is used as the absorption layer. Three structures of planar PDs were demonstrated using transparent indium tin oxide (ITO) contacts. The dark current of PDs were suppressed by applying the SiO2 Schottky-barrier enhancement layer, but the rough interface between the SiO 2 and InGaAsN layer limited the device characteristics. Depositing a thin layer of ITO between the SiO2 and InGaAsN layers greatly improved the interface quality and the photo current-to-dark current ratio was also increased from 1.7.7 to 45.29 under 0.5 V bias.
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U2 - 10.1143/JJAP.46.2373
DO - 10.1143/JJAP.46.2373
M3 - Article
AN - SCOPUS:34547873593
VL - 46
SP - 2373
EP - 2376
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -