InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer

Ming Lun Lee; Shang Ju Tu; Jinn Kong Sheu

doi:10.1016/j.physe.2022.115352

InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer

Ming Lun Lee, Shang Ju Tu, Jinn Kong Sheu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This study demonstrates a GaN-based light-emitting diode (LED) structure with an Al composition, graded p-Al_xGa_1−xN top contact layer as the electron-blocking layer (EBL). Experimental results showed that the LEDs with graded EBL layer exhibited lower forward voltage (V_f) and higher output power (L_op) than conventional LEDs with constant Al composition in the EBL. The lower V_f is attributed to the relatively higher hole concentration caused by the polarization field in the graded AlGaN EBL. In addition to the improved hole concentration, the higher L_op is also due to the improved electron confinement caused by the graded EBL.

Original language	English
Article number	115352
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	143
DOIs	https://doi.org/10.1016/j.physe.2022.115352
Publication status	Published - 2022 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2022.115352

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@article{fa07a3e4a9ad451492ad2e61af2ac9df,

title = "InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer",

abstract = "This study demonstrates a GaN-based light-emitting diode (LED) structure with an Al composition, graded p-AlxGa1−xN top contact layer as the electron-blocking layer (EBL). Experimental results showed that the LEDs with graded EBL layer exhibited lower forward voltage (Vf) and higher output power (Lop) than conventional LEDs with constant Al composition in the EBL. The lower Vf is attributed to the relatively higher hole concentration caused by the polarization field in the graded AlGaN EBL. In addition to the improved hole concentration, the higher Lop is also due to the improved electron confinement caused by the graded EBL.",

author = "Lee, {Ming Lun} and Tu, {Shang Ju} and Sheu, {Jinn Kong}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan , for financial support under contract Nos. MOST-107-2221-E-006-187-MY3 , MOST-107-2112-M-006-023-MY3 , 107-2221-E-218-012-MY3 and MOST-106-2221-E-006-164 . The authors would also like to thank Dr. Ya-Hsuan Shih for supporting the simulation task. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = sep,

doi = "10.1016/j.physe.2022.115352",

language = "English",

volume = "143",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier BV",

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TY - JOUR

T1 - InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer

AU - Lee, Ming Lun

AU - Tu, Shang Ju

AU - Sheu, Jinn Kong

N1 - Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan , for financial support under contract Nos. MOST-107-2221-E-006-187-MY3 , MOST-107-2112-M-006-023-MY3 , 107-2221-E-218-012-MY3 and MOST-106-2221-E-006-164 . The authors would also like to thank Dr. Ya-Hsuan Shih for supporting the simulation task. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/9

Y1 - 2022/9

N2 - This study demonstrates a GaN-based light-emitting diode (LED) structure with an Al composition, graded p-AlxGa1−xN top contact layer as the electron-blocking layer (EBL). Experimental results showed that the LEDs with graded EBL layer exhibited lower forward voltage (Vf) and higher output power (Lop) than conventional LEDs with constant Al composition in the EBL. The lower Vf is attributed to the relatively higher hole concentration caused by the polarization field in the graded AlGaN EBL. In addition to the improved hole concentration, the higher Lop is also due to the improved electron confinement caused by the graded EBL.

AB - This study demonstrates a GaN-based light-emitting diode (LED) structure with an Al composition, graded p-AlxGa1−xN top contact layer as the electron-blocking layer (EBL). Experimental results showed that the LEDs with graded EBL layer exhibited lower forward voltage (Vf) and higher output power (Lop) than conventional LEDs with constant Al composition in the EBL. The lower Vf is attributed to the relatively higher hole concentration caused by the polarization field in the graded AlGaN EBL. In addition to the improved hole concentration, the higher Lop is also due to the improved electron confinement caused by the graded EBL.

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U2 - 10.1016/j.physe.2022.115352

DO - 10.1016/j.physe.2022.115352

M3 - Article

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SN - 1386-9477

VL - 143

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

M1 - 115352

ER -

InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer

Abstract

All Science Journal Classification (ASJC) codes

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