InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer

Shoou Jinn Chang, Sheng Fu Yu, Ray Ming Lin, Shuguang Li, Tsung Hsun Chiang, Sheng Po Chang, Chang Ho Chen

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this letter, we investigate the external quantum efficiency (EQE) and efficiency droop characteristics of InGaNbased light-emitting diodes (LEDs) incorporating AlxGa1-xN staircase electron blocking layers (EBLs). The LED featuring a composition-stepped EBL (x: 0.21, 0.14, and 0.07) exhibited the highest EQE under low current levels, but a severe efficiency droop at high current levels. In contrast, the LED with a composition-stepped EBL (x: 0.07, 0.14, and 0.21) exhibited a significant improvement in its onset of droop and a mitigated efficiency droop; we ascribe these features to the increased hole injection rate and the decreased built-in electric field.

Original languageEnglish
Article number6269920
Pages (from-to)1737-1740
Number of pages4
JournalIEEE Photonics Technology Letters
Volume24
Issue number19
DOIs
Publication statusPublished - 2012 Sep 24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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