InGaN-based MQE LEDs with tunnel-junction-cascaded structure

Shoou Jinn Chang; Wei Heng Lin

doi:10.1109/TENCON.2015.7372735

InGaN-based MQE LEDs with tunnel-junction-cascaded structure

Shoou Jinn Chang, Wei Heng Lin

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJL) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05×10-3 and 1.95×10-3 ω·cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.

Original language	English
Title of host publication	TENCON 2015 - 2015 IEEE Region 10 Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479986415
DOIs	https://doi.org/10.1109/TENCON.2015.7372735
Publication status	Published - 2016 Jan 5
Event	35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao Duration: 2015 Nov 1 → 2015 Nov 4

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume	2016-January
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Other

Other	35th IEEE Region 10 Conference, TENCON 2015
Country/Territory	Macao
City	Macau
Period	15-11-01 → 15-11-04

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TENCON.2015.7372735

Cite this

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title = "InGaN-based MQE LEDs with tunnel-junction-cascaded structure",

abstract = "The authors report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJL) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05×10-3 and 1.95×10-3 ω·cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.",

author = "Chang, {Shoou Jinn} and Lin, {Wei Heng}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 35th IEEE Region 10 Conference, TENCON 2015 ; Conference date: 01-11-2015 Through 04-11-2015",

year = "2016",

month = jan,

day = "5",

doi = "10.1109/TENCON.2015.7372735",

language = "English",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Chang, SJ & Lin, WH 2016, InGaN-based MQE LEDs with tunnel-junction-cascaded structure. in TENCON 2015 - 2015 IEEE Region 10 Conference., 7372735, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2016-January, Institute of Electrical and Electronics Engineers Inc., 35th IEEE Region 10 Conference, TENCON 2015, Macau, Macao, 15-11-01. https://doi.org/10.1109/TENCON.2015.7372735

InGaN-based MQE LEDs with tunnel-junction-cascaded structure. / Chang, Shoou Jinn; Lin, Wei Heng.
TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2016. 7372735 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - The authors report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJL) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05×10-3 and 1.95×10-3 ω·cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.

AB - The authors report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJL) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05×10-3 and 1.95×10-3 ω·cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.

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InGaN-based MQE LEDs with tunnel-junction-cascaded structure

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