TY - GEN
T1 - InGaN-based MQE LEDs with tunnel-junction-cascaded structure
AU - Chang, Shoou Jinn
AU - Lin, Wei Heng
PY - 2016/1/5
Y1 - 2016/1/5
N2 - The authors report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJL) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05×10-3 and 1.95×10-3 ω·cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.
AB - The authors report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJL) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05×10-3 and 1.95×10-3 ω·cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.
UR - http://www.scopus.com/inward/record.url?scp=84962156837&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84962156837&partnerID=8YFLogxK
U2 - 10.1109/TENCON.2015.7372735
DO - 10.1109/TENCON.2015.7372735
M3 - Conference contribution
AN - SCOPUS:84962156837
T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON
BT - TENCON 2015 - 2015 IEEE Region 10 Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 35th IEEE Region 10 Conference, TENCON 2015
Y2 - 1 November 2015 through 4 November 2015
ER -