InGaN-based MQE LEDs with tunnel-junction-cascaded structure

Shoou Jinn Chang, Wei Heng Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The authors report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p++-GaN/i-InGaN/n++-GaN tunnel junction layers (TJL) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05×10-3 and 1.95×10-3 ω·cm2 for the LED with p++-GaN/i-InGaN/n++-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.

Original languageEnglish
Title of host publicationTENCON 2015 - 2015 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479986415
Publication statusPublished - 2016 Jan 5
Event35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao
Duration: 2015 Nov 12015 Nov 4

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450


Other35th IEEE Region 10 Conference, TENCON 2015

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


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