InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer

Yu Hsiang Yeh, Jinn Kong Sheu, Ming Lun Lee, Po Cheng Chen, Yu Chen Yang, Cheng Hsiung Yen, Wei Chih Lai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on SAS was greater than that of LEDs grown on implantation-free sapphire substrates. The output power of LEDs grown on SAS was enhanced by 20% at an injection current of 700 mA. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs.

Original languageEnglish
Article number6650115
Pages (from-to)1542-1544
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number12
DOIs
Publication statusPublished - 2013 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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