InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer

Yu Hsiang Yeh, Jinn-Kong Sheu, Ming Lun Lee, Po Cheng Chen, Yu Chen Yang, Cheng Hsiung Yen, Wei-Chi Lai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on SAS was greater than that of LEDs grown on implantation-free sapphire substrates. The output power of LEDs grown on SAS was enhanced by 20% at an injection current of 700 mA. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs.

Original languageEnglish
Article number6650115
Pages (from-to)1542-1544
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number12
DOIs
Publication statusPublished - 2013 Dec 1

Fingerprint

Light scattering
Aluminum Oxide
Light emitting diodes
Sapphire
Air
Epitaxial layers
Substrates
Merging
Ion implantation
Photons
Scattering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yeh, Yu Hsiang ; Sheu, Jinn-Kong ; Lee, Ming Lun ; Chen, Po Cheng ; Yang, Yu Chen ; Yen, Cheng Hsiung ; Lai, Wei-Chi. / InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 12. pp. 1542-1544.
@article{74c86760666746569f3e1b66e01238f5,
title = "InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer",
abstract = "The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on SAS was greater than that of LEDs grown on implantation-free sapphire substrates. The output power of LEDs grown on SAS was enhanced by 20{\%} at an injection current of 700 mA. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs.",
author = "Yeh, {Yu Hsiang} and Jinn-Kong Sheu and Lee, {Ming Lun} and Chen, {Po Cheng} and Yang, {Yu Chen} and Yen, {Cheng Hsiung} and Wei-Chi Lai",
year = "2013",
month = "12",
day = "1",
doi = "10.1109/LED.2013.2285305",
language = "English",
volume = "34",
pages = "1542--1544",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer. / Yeh, Yu Hsiang; Sheu, Jinn-Kong; Lee, Ming Lun; Chen, Po Cheng; Yang, Yu Chen; Yen, Cheng Hsiung; Lai, Wei-Chi.

In: IEEE Electron Device Letters, Vol. 34, No. 12, 6650115, 01.12.2013, p. 1542-1544.

Research output: Contribution to journalArticle

TY - JOUR

T1 - InGaN Flip-Chip light-emitting diodes with embedded air voids as light-scattering layer

AU - Yeh, Yu Hsiang

AU - Sheu, Jinn-Kong

AU - Lee, Ming Lun

AU - Chen, Po Cheng

AU - Yang, Yu Chen

AU - Yen, Cheng Hsiung

AU - Lai, Wei-Chi

PY - 2013/12/1

Y1 - 2013/12/1

N2 - The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on SAS was greater than that of LEDs grown on implantation-free sapphire substrates. The output power of LEDs grown on SAS was enhanced by 20% at an injection current of 700 mA. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs.

AB - The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on SAS was greater than that of LEDs grown on implantation-free sapphire substrates. The output power of LEDs grown on SAS was enhanced by 20% at an injection current of 700 mA. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs.

UR - http://www.scopus.com/inward/record.url?scp=84889588552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889588552&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2285305

DO - 10.1109/LED.2013.2285305

M3 - Article

VL - 34

SP - 1542

EP - 1544

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

M1 - 6650115

ER -