InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer

S. H. Tu, C. J. Lan, S. H. Wang, M. L. Lee, K. H. Chang, R. M. Lin, J. Y. Chang, Jinn-Kong Sheu

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts and textured Ga-doped ZnO (GZO) contact layer to serve as the n- and p-type electrode pads, respectively. Compared with the conventional LEDs with flat surface and Cr/Au metal contacts, the nonalloyed Ag/Cr/Au contacts used in the present experimental LEDs play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads. Enhancement of light output power observed from the experimental LEDs is also due to the textured GZO layer that can disperse the angular distribution of photons at the GZO/air interface. With an injection current of 20 mA, the output power of experimental LEDs can be improved markedly by a magnitude of 30% compared with conventional GaN-based LEDs.

Original languageEnglish
Article number133504
JournalApplied Physics Letters
Volume96
Issue number13
DOIs
Publication statusPublished - 2010 Apr 12

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gallium nitrides
gallium
light emitting diodes
electrodes
electric contacts
output
metals
reflectors
flat surfaces
angular distribution
injection
augmentation
air
photons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Tu, S. H. ; Lan, C. J. ; Wang, S. H. ; Lee, M. L. ; Chang, K. H. ; Lin, R. M. ; Chang, J. Y. ; Sheu, Jinn-Kong. / InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer. In: Applied Physics Letters. 2010 ; Vol. 96, No. 13.
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abstract = "We demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts and textured Ga-doped ZnO (GZO) contact layer to serve as the n- and p-type electrode pads, respectively. Compared with the conventional LEDs with flat surface and Cr/Au metal contacts, the nonalloyed Ag/Cr/Au contacts used in the present experimental LEDs play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads. Enhancement of light output power observed from the experimental LEDs is also due to the textured GZO layer that can disperse the angular distribution of photons at the GZO/air interface. With an injection current of 20 mA, the output power of experimental LEDs can be improved markedly by a magnitude of 30{\%} compared with conventional GaN-based LEDs.",
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InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer. / Tu, S. H.; Lan, C. J.; Wang, S. H.; Lee, M. L.; Chang, K. H.; Lin, R. M.; Chang, J. Y.; Sheu, Jinn-Kong.

In: Applied Physics Letters, Vol. 96, No. 13, 133504, 12.04.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer

AU - Tu, S. H.

AU - Lan, C. J.

AU - Wang, S. H.

AU - Lee, M. L.

AU - Chang, K. H.

AU - Lin, R. M.

AU - Chang, J. Y.

AU - Sheu, Jinn-Kong

PY - 2010/4/12

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AB - We demonstrate a GaN-based light-emitting diode (LED) with nonalloyed metal contacts and textured Ga-doped ZnO (GZO) contact layer to serve as the n- and p-type electrode pads, respectively. Compared with the conventional LEDs with flat surface and Cr/Au metal contacts, the nonalloyed Ag/Cr/Au contacts used in the present experimental LEDs play the role of reflector to prevent the emitted light from absorption by the opaque electrode pads. Enhancement of light output power observed from the experimental LEDs is also due to the textured GZO layer that can disperse the angular distribution of photons at the GZO/air interface. With an injection current of 20 mA, the output power of experimental LEDs can be improved markedly by a magnitude of 30% compared with conventional GaN-based LEDs.

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