InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu; S. J. Chang; Y. K. Su; S. C. Chen; J. M. Tsai; W. C. Lai; C. H. Kuo; C. S. Chang

doi:10.1109/LPT.2005.851989

InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo, C. S. Chang

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30 Citations (Scopus)

Abstract

Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Si_x N_y layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

Original language	English
Pages (from-to)	1620-1622
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2005.851989
Publication status	Published - 2005 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2005.851989

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title = "InGaN-GaN MQW LEDs with Si treatment",

abstract = "Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.",

author = "Hsu, {Y. P.} and Chang, {S. J.} and Su, {Y. K.} and Chen, {S. C.} and Tsai, {J. M.} and Lai, {W. C.} and Kuo, {C. H.} and Chang, {C. S.}",

note = "Funding Information: Manuscript received November 29, 2004; revised April 2, 2005. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095.",

year = "2005",

month = aug,

doi = "10.1109/LPT.2005.851989",

language = "English",

volume = "17",

pages = "1620--1622",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - InGaN-GaN MQW LEDs with Si treatment

AU - Hsu, Y. P.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, S. C.

AU - Tsai, J. M.

AU - Lai, W. C.

AU - Kuo, C. H.

AU - Chang, C. S.

N1 - Funding Information: Manuscript received November 29, 2004; revised April 2, 2005. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095.

PY - 2005/8

Y1 - 2005/8

N2 - Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

AB - Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

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DO - 10.1109/LPT.2005.851989

M3 - Article

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EP - 1622

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

InGaN-GaN MQW LEDs with Si treatment

Abstract

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