InGaN-GaN multiquantum-well blue and green light-emitting diodes

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw

Research output: Contribution to journalArticlepeer-review

250 Citations (Scopus)

Abstract

InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminescence (EL) measurements. It was found that there were only small shifts observed in PL and EL peak positions of the blue MQW LEDs when the number of quantum well (QW) increased. However, significant shifts in PL and EL peak positions were observed in green MQW LEDs when the number of QW increased. It was also found that there was a large blue shift in EL peak position under high current injection in blue MQW LEDs. However, the blue shift in green MQW LEDs was negligibly small when the injection current was large. These observations could all be attributed to the rapid relaxation in green MQW LEDs since the In composition ratio in the InGaN well was high for the green MQW LEDs. The forward voltage Vf of green MQW LEDs was also found to be larger than that of blue MQW LDDs due to the same reason.

Original languageEnglish
Pages (from-to)278-283
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume8
Issue number2
DOIs
Publication statusPublished - 2002 Mar

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InGaN-GaN multiquantum-well blue and green light-emitting diodes'. Together they form a unique fingerprint.

Cite this