InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface

Jinn-Kong Sheu, Chih-Ming Tsai, M. L. Lee, S. C. Shei, Wei-Chi Lai

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) with truncated micropyramids surfaces performed by metalorganic chemical vapor deposition were demonstrated. In this study, a growth-interruption step and an Mg-treatment process were simultaneously performed to create multiple truncated micropyramids on LED surface. Experimental results indicated that GaN-based LEDs with the truncated micropyramids on the top surface demonstrate improved external efficiency of around 60% at 20 mA. It is worth noting that the typical 20 mA driven forward voltage is only 0.15 V higher than that of conventional LEDs (LEDs with specular surface).

Original languageEnglish
Article number113505
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
Publication statusPublished - 2006 Mar 30

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light emitting diodes
interruption
metalorganic chemical vapor deposition
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface",
abstract = "GaN-based light-emitting diodes (LEDs) with truncated micropyramids surfaces performed by metalorganic chemical vapor deposition were demonstrated. In this study, a growth-interruption step and an Mg-treatment process were simultaneously performed to create multiple truncated micropyramids on LED surface. Experimental results indicated that GaN-based LEDs with the truncated micropyramids on the top surface demonstrate improved external efficiency of around 60{\%} at 20 mA. It is worth noting that the typical 20 mA driven forward voltage is only 0.15 V higher than that of conventional LEDs (LEDs with specular surface).",
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InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface. / Sheu, Jinn-Kong; Tsai, Chih-Ming; Lee, M. L.; Shei, S. C.; Lai, Wei-Chi.

In: Applied Physics Letters, Vol. 88, No. 11, 113505, 30.03.2006.

Research output: Contribution to journalArticle

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T1 - InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface

AU - Sheu, Jinn-Kong

AU - Tsai, Chih-Ming

AU - Lee, M. L.

AU - Shei, S. C.

AU - Lai, Wei-Chi

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AB - GaN-based light-emitting diodes (LEDs) with truncated micropyramids surfaces performed by metalorganic chemical vapor deposition were demonstrated. In this study, a growth-interruption step and an Mg-treatment process were simultaneously performed to create multiple truncated micropyramids on LED surface. Experimental results indicated that GaN-based LEDs with the truncated micropyramids on the top surface demonstrate improved external efficiency of around 60% at 20 mA. It is worth noting that the typical 20 mA driven forward voltage is only 0.15 V higher than that of conventional LEDs (LEDs with specular surface).

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