InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film

Jinn Kong Sheu, Kuo Hua Chang, Shang Ju Tu, Ming Lun Lee, Chih Ciao Yang, Che Kang Hsu, Wei Chih Lai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO2 mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa. While processing the device, dry etching was unnecessary for exposing the n-GaN underlying layer in order to form the n-type Ohmic contacts. This could be attributed to the fact that the n-GaN template layer with an electron concentration of around 8 × 1018/cm3 was exposed after the removal of the SiO2 mask layer. With an injection current of 20 mA, GaN-based LEDs with OSFs exhibited a 21% enhancement in light output compared with those that have vertical sidewall facets. The enhancement is attributed to the fact that photons extracted from OSFs can reduce internal absorption loss.

Original languageEnglish
Pages (from-to)A562-A567
JournalOptics Express
Volume18
Issue number104
DOIs
Publication statusPublished - 2010 Nov 8

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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