InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

Kai Hsuan Lee; P. C. Chang; Shoou Jinn Chang; San Lein Wu

doi:10.1109/JQE.2011.2158389

InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

Kai Hsuan Lee, P. C. Chang, Shoou Jinn Chang, San Lein Wu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

Original language	English
Article number	5783282
Pages (from-to)	1107-1112
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	47
Issue number	8
DOIs	https://doi.org/10.1109/JQE.2011.2158389
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2011.2158389

Cite this

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title = "InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers",

abstract = "We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.",

author = "Lee, {Kai Hsuan} and Chang, {P. C.} and Chang, {Shoou Jinn} and Wu, {San Lein}",

note = "Funding Information: Manuscript received March 24, 2011; revised May 9, 2011; accepted May 24, 2011. Date of current version July 5, 2011. This work was supported in part by the National Science Council, under contract NSC 97-2221-E-168-051-MY3.",

year = "2011",

doi = "10.1109/JQE.2011.2158389",

language = "English",

volume = "47",

pages = "1107--1112",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

AU - Lee, Kai Hsuan

AU - Chang, P. C.

AU - Chang, Shoou Jinn

AU - Wu, San Lein

N1 - Funding Information: Manuscript received March 24, 2011; revised May 9, 2011; accepted May 24, 2011. Date of current version July 5, 2011. This work was supported in part by the National Science Council, under contract NSC 97-2221-E-168-051-MY3.

PY - 2011

Y1 - 2011

N2 - We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

AB - We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

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InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

Abstract

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