Abstract
We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.
| Original language | English |
|---|---|
| Article number | 5783282 |
| Pages (from-to) | 1107-1112 |
| Number of pages | 6 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 47 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2011 Jul 18 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers. / Lee, Kai Hsuan; Chang, P. C.; Chang, Shoou-Jinn; Wu, San Lein.
In: IEEE Journal of Quantum Electronics, Vol. 47, No. 8, 5783282, 18.07.2011, p. 1107-1112.Research output: Contribution to journal › Article
TY - JOUR
T1 - InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers
AU - Lee, Kai Hsuan
AU - Chang, P. C.
AU - Chang, Shoou-Jinn
AU - Wu, San Lein
PY - 2011/7/18
Y1 - 2011/7/18
N2 - We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.
AB - We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.
UR - http://www.scopus.com/inward/record.url?scp=79960269607&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960269607&partnerID=8YFLogxK
U2 - 10.1109/JQE.2011.2158389
DO - 10.1109/JQE.2011.2158389
M3 - Article
AN - SCOPUS:79960269607
VL - 47
SP - 1107
EP - 1112
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 8
M1 - 5783282
ER -