InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

Kai Hsuan Lee, P. C. Chang, Shoou-Jinn Chang, San Lein Wu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

Original languageEnglish
Article number5783282
Pages (from-to)1107-1112
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number8
DOIs
Publication statusPublished - 2011 Jul 18

Fingerprint

Aluminum nitride
aluminum nitrides
Photodetectors
caps
photometers
Semiconductor materials
Thermionic emission
thermionic emission
Gallium
Metals
Leakage currents
rejection
metals
low noise
gallium
leakage
Fabrication
Defects
fabrication
defects

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lee, Kai Hsuan ; Chang, P. C. ; Chang, Shoou-Jinn ; Wu, San Lein. / InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers. In: IEEE Journal of Quantum Electronics. 2011 ; Vol. 47, No. 8. pp. 1107-1112.
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InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers. / Lee, Kai Hsuan; Chang, P. C.; Chang, Shoou-Jinn; Wu, San Lein.

In: IEEE Journal of Quantum Electronics, Vol. 47, No. 8, 5783282, 18.07.2011, p. 1107-1112.

Research output: Contribution to journalArticle

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