InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

Kai Hsuan Lee, P. C. Chang, Shoou Jinn Chang, San Lein Wu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

Original languageEnglish
Article number5783282
Pages (from-to)1107-1112
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number8
DOIs
Publication statusPublished - 2011 Jul 18

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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