InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

Kai Hsuan Lee; P. C. Chang; Shoou Jinn Chang; San Lein Wu

doi:10.1109/JQE.2011.2158389

InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers

Kai Hsuan Lee, P. C. Chang, Shoou Jinn Chang, San Lein Wu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

Original language	English
Article number	5783282
Pages (from-to)	1107-1112
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	47
Issue number	8
DOIs	https://doi.org/10.1109/JQE.2011.2158389
Publication status	Published - 2011 Jul 18

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "InGaN metal-semiconductor-metal photodetectors with aluminum nitride cap layers",

abstract = "We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.",

author = "Lee, {Kai Hsuan} and Chang, {P. C.} and Chang, {Shoou Jinn} and Wu, {San Lein}",

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AU - Lee, Kai Hsuan

AU - Chang, P. C.

AU - Chang, Shoou Jinn

AU - Wu, San Lein

PY - 2011/7/18

Y1 - 2011/7/18

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AB - We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

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