InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures

Liang Wen Ji, Yan Kuin Su, Shoou-Jinn Chang, Shang Chao Hung, Chun Kai Wang, Te Hua Fang, Tzong-Yow Tsai, Wen-Kuei Chuang, Wei Su, Jing Chang Zhong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

InGaN self-assembled nanostructures have been prepared by growth interruption during metal-organic chemical vapor deposition (MOCVD) growth. With a 12s growth interruption, we successfully formed InGaN nanostructures with a typical lateral size of 25 nm and an average height of 4.1 nm. The nanostructure density was approximately 2 × 1010 cm -2. In contrast, much larger InGaN nanostructures were obtained without growth interruption. InGaN metal-semiconductor-metal (MSM) photodiodes with and without nanostructures were also fabricated. Although the dark currents were approximately the same for all detectors, we could achieve a much larger photocurrent-to-dark current contrast ratio from samples with small self-assembled InGaN nanostructures.

Original languageEnglish
Pages (from-to)518-521
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number2
DOIs
Publication statusPublished - 2004 Jan 1

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Photodiodes
photodiodes
Nanostructures
interruption
Semiconductor materials
dark current
Metals
metals
Dark currents
metalorganic chemical vapor deposition
photocurrents
Organic chemicals
Photocurrents
Chemical vapor deposition
detectors
Detectors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ji, Liang Wen ; Su, Yan Kuin ; Chang, Shoou-Jinn ; Hung, Shang Chao ; Wang, Chun Kai ; Fang, Te Hua ; Tsai, Tzong-Yow ; Chuang, Wen-Kuei ; Su, Wei ; Zhong, Jing Chang. / InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 2. pp. 518-521.
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abstract = "InGaN self-assembled nanostructures have been prepared by growth interruption during metal-organic chemical vapor deposition (MOCVD) growth. With a 12s growth interruption, we successfully formed InGaN nanostructures with a typical lateral size of 25 nm and an average height of 4.1 nm. The nanostructure density was approximately 2 × 1010 cm -2. In contrast, much larger InGaN nanostructures were obtained without growth interruption. InGaN metal-semiconductor-metal (MSM) photodiodes with and without nanostructures were also fabricated. Although the dark currents were approximately the same for all detectors, we could achieve a much larger photocurrent-to-dark current contrast ratio from samples with small self-assembled InGaN nanostructures.",
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InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures. / Ji, Liang Wen; Su, Yan Kuin; Chang, Shoou-Jinn; Hung, Shang Chao; Wang, Chun Kai; Fang, Te Hua; Tsai, Tzong-Yow; Chuang, Wen-Kuei; Su, Wei; Zhong, Jing Chang.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 2, 01.01.2004, p. 518-521.

Research output: Contribution to journalArticle

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T1 - InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures

AU - Ji, Liang Wen

AU - Su, Yan Kuin

AU - Chang, Shoou-Jinn

AU - Hung, Shang Chao

AU - Wang, Chun Kai

AU - Fang, Te Hua

AU - Tsai, Tzong-Yow

AU - Chuang, Wen-Kuei

AU - Su, Wei

AU - Zhong, Jing Chang

PY - 2004/1/1

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AB - InGaN self-assembled nanostructures have been prepared by growth interruption during metal-organic chemical vapor deposition (MOCVD) growth. With a 12s growth interruption, we successfully formed InGaN nanostructures with a typical lateral size of 25 nm and an average height of 4.1 nm. The nanostructure density was approximately 2 × 1010 cm -2. In contrast, much larger InGaN nanostructures were obtained without growth interruption. InGaN metal-semiconductor-metal (MSM) photodiodes with and without nanostructures were also fabricated. Although the dark currents were approximately the same for all detectors, we could achieve a much larger photocurrent-to-dark current contrast ratio from samples with small self-assembled InGaN nanostructures.

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