InGaN p-i-n ultraviolet-A band-pass photodetectors

T. K. Ko; S. C. Shei; S. J. Chang; Y. Z. Chiou; R. M. Lin; W. S. Chen; C. F. Shen; C. S. Chang; K. W. Lin

doi:10.1049/ip-opt:20050083

InGaN p-i-n ultraviolet-A band-pass photodetectors

T. K. Ko, S. C. Shei, S. J. Chang, Y. Z. Chiou, R. M. Lin, W. S. Chen, C. F. Shen, C. S. Chang, K. W. Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10^-10 and 4×10^-10 A for FC p-i-n PDs with i-In_0.1Ga_0.9N and i-In _0.05Ga_0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

Original language	English
Pages (from-to)	212-214
Number of pages	3
Journal	IEE Proceedings: Optoelectronics
Volume	153
Issue number	4
DOIs	https://doi.org/10.1049/ip-opt:20050083
Publication status	Published - 2006 Aug

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1049/ip-opt:20050083

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@article{24b7659c11b94789a67b6417b5dff324,

title = "InGaN p-i-n ultraviolet-A band-pass photodetectors",

abstract = "InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.",

author = "Ko, {T. K.} and Shei, {S. C.} and Chang, {S. J.} and Chiou, {Y. Z.} and Lin, {R. M.} and Chen, {W. S.} and Shen, {C. F.} and Chang, {C. S.} and Lin, {K. W.}",

year = "2006",

month = aug,

doi = "10.1049/ip-opt:20050083",

language = "English",

volume = "153",

pages = "212--214",

journal = "IEE Proceedings: Optoelectronics",

issn = "1350-2433",

publisher = "Institute of Electrical Engineers",

number = "4",

}

TY - JOUR

T1 - InGaN p-i-n ultraviolet-A band-pass photodetectors

AU - Ko, T. K.

AU - Shei, S. C.

AU - Chang, S. J.

AU - Chiou, Y. Z.

AU - Lin, R. M.

AU - Chen, W. S.

AU - Shen, C. F.

AU - Chang, C. S.

AU - Lin, K. W.

PY - 2006/8

Y1 - 2006/8

N2 - InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

AB - InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

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U2 - 10.1049/ip-opt:20050083

DO - 10.1049/ip-opt:20050083

M3 - Article

AN - SCOPUS:33747123640

SN - 1350-2433

VL - 153

SP - 212

EP - 214

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

IS - 4

ER -

InGaN p-i-n ultraviolet-A band-pass photodetectors

Abstract

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