InGaN p-i-n ultraviolet-A band-pass photodetectors

T. K. Ko, S. C. Shei, S. J. Chang, Y. Z. Chiou, R. M. Lin, W. S. Chen, C. F. Shen, C. S. Chang, K. W. Lin

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Abstract

InGaN p-i-n ultraviolet (UV)-A band-pass photodetectors (PDs) with indium-tin-oxide (ITO) contact and with flip-chip (FC) technology were both fabricated and characterised. With -5V applied bias, it was found that measured dark currents were 7×10-10 and 4×10-10 A for FC p-i-n PDs with i-In0.1Ga0.9N and i-In 0.05Ga0.95N active layers, respectively. With an incident light wavelength of 385nm, it was found that external quantum efficiencies of FC p-i-n PD and ITO p-i-n PD were around 67 and 35, respectively. The rejection ratios of FC p-i-n PD were also found to be larger than those observed from ITO p-i-n PD.

Original languageEnglish
Pages (from-to)212-214
Number of pages3
JournalIEE Proceedings: Optoelectronics
Volume153
Issue number4
DOIs
Publication statusPublished - 2006 Aug

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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    Ko, T. K., Shei, S. C., Chang, S. J., Chiou, Y. Z., Lin, R. M., Chen, W. S., Shen, C. F., Chang, C. S., & Lin, K. W. (2006). InGaN p-i-n ultraviolet-A band-pass photodetectors. IEE Proceedings: Optoelectronics, 153(4), 212-214. https://doi.org/10.1049/ip-opt:20050083