InGaN quantum dot photodetectors

L. W. Ji; Y. K. Su; S. J. Chang; S. H. Liu; C. K. Wang; S. T. Tsai; T. H. Fang; L. W. Wu; Q. K. Xue

doi:10.1016/S0038-1101(03)00159-X

InGaN quantum dot photodetectors

L. W. Ji, Y. K. Su, S. J. Chang, S. H. Liu, C. K. Wang, S. T. Tsai, T. H. Fang, L. W. Wu, Q. K. Xue

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2 × 10¹⁰ cm^-2. Nitride-based QD metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that we could significantly enhance the photocurrent to dark current contrast ratio of the MSM photodetectors by the use of QD structure.

Original language	English
Pages (from-to)	1753-1756
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1101(03)00159-X
Publication status	Published - 2003 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(03)00159-X

Cite this

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title = "InGaN quantum dot photodetectors",

abstract = "Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2 × 1010 cm-2. Nitride-based QD metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that we could significantly enhance the photocurrent to dark current contrast ratio of the MSM photodetectors by the use of QD structure.",

author = "Ji, {L. W.} and Su, {Y. K.} and Chang, {S. J.} and Liu, {S. H.} and Wang, {C. K.} and Tsai, {S. T.} and Fang, {T. H.} and Wu, {L. W.} and Xue, {Q. K.}",

note = "Funding Information: This work was financially supported by the National Science Council of Taiwan (Project no. NSC91-2215-E006-012). ",

year = "2003",

month = oct,

doi = "10.1016/S0038-1101(03)00159-X",

language = "English",

volume = "47",

pages = "1753--1756",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - InGaN quantum dot photodetectors

AU - Ji, L. W.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Liu, S. H.

AU - Wang, C. K.

AU - Tsai, S. T.

AU - Fang, T. H.

AU - Wu, L. W.

AU - Xue, Q. K.

N1 - Funding Information: This work was financially supported by the National Science Council of Taiwan (Project no. NSC91-2215-E006-012).

PY - 2003/10

Y1 - 2003/10

N2 - Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2 × 1010 cm-2. Nitride-based QD metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that we could significantly enhance the photocurrent to dark current contrast ratio of the MSM photodetectors by the use of QD structure.

AB - Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2 × 1010 cm-2. Nitride-based QD metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that we could significantly enhance the photocurrent to dark current contrast ratio of the MSM photodetectors by the use of QD structure.

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SP - 1753

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

InGaN quantum dot photodetectors

Abstract

All Science Journal Classification (ASJC) codes

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