InGaN quantum dot photodetectors

L. W. Ji, Y. K. Su, Shoou-Jinn Chang, S. H. Liu, C. K. Wang, S. T. Tsai, T. H. Fang, L. W. Wu, Q. K. Xue

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2 × 1010 cm-2. Nitride-based QD metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that we could significantly enhance the photocurrent to dark current contrast ratio of the MSM photodetectors by the use of QD structure.

Original languageEnglish
Pages (from-to)1753-1756
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number10
DOIs
Publication statusPublished - 2003 Oct 1

Fingerprint

Photodetectors
Semiconductor quantum dots
photometers
Metals
quantum dots
metals
Semiconductor materials
Organic Chemicals
Dark currents
interruption
Organic chemicals
dark current
Photocurrents
Nitrides
nitrides
metalorganic chemical vapor deposition
photocurrents
Chemical vapor deposition

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ji, L. W., Su, Y. K., Chang, S-J., Liu, S. H., Wang, C. K., Tsai, S. T., ... Xue, Q. K. (2003). InGaN quantum dot photodetectors. Solid-State Electronics, 47(10), 1753-1756. https://doi.org/10.1016/S0038-1101(03)00159-X
Ji, L. W. ; Su, Y. K. ; Chang, Shoou-Jinn ; Liu, S. H. ; Wang, C. K. ; Tsai, S. T. ; Fang, T. H. ; Wu, L. W. ; Xue, Q. K. / InGaN quantum dot photodetectors. In: Solid-State Electronics. 2003 ; Vol. 47, No. 10. pp. 1753-1756.
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Ji, LW, Su, YK, Chang, S-J, Liu, SH, Wang, CK, Tsai, ST, Fang, TH, Wu, LW & Xue, QK 2003, 'InGaN quantum dot photodetectors', Solid-State Electronics, vol. 47, no. 10, pp. 1753-1756. https://doi.org/10.1016/S0038-1101(03)00159-X

InGaN quantum dot photodetectors. / Ji, L. W.; Su, Y. K.; Chang, Shoou-Jinn; Liu, S. H.; Wang, C. K.; Tsai, S. T.; Fang, T. H.; Wu, L. W.; Xue, Q. K.

In: Solid-State Electronics, Vol. 47, No. 10, 01.10.2003, p. 1753-1756.

Research output: Contribution to journalArticle

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T1 - InGaN quantum dot photodetectors

AU - Ji, L. W.

AU - Su, Y. K.

AU - Chang, Shoou-Jinn

AU - Liu, S. H.

AU - Wang, C. K.

AU - Tsai, S. T.

AU - Fang, T. H.

AU - Wu, L. W.

AU - Xue, Q. K.

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AB - Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density was about 2 × 1010 cm-2. Nitride-based QD metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that we could significantly enhance the photocurrent to dark current contrast ratio of the MSM photodetectors by the use of QD structure.

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Ji LW, Su YK, Chang S-J, Liu SH, Wang CK, Tsai ST et al. InGaN quantum dot photodetectors. Solid-State Electronics. 2003 Oct 1;47(10):1753-1756. https://doi.org/10.1016/S0038-1101(03)00159-X