Abstract
InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In0.23Ga0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In0.23Ga 0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.
Original language | English |
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Pages (from-to) | 1020-1022 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 22 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2004 May |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films