InGaN/AIGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer

C. H. Chen, S. J. Chang, Y. K. Su

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In0.23Ga0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In0.23Ga 0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.

Original languageEnglish
Pages (from-to)1020-1022
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number3
DOIs
Publication statusPublished - 2004 May

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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