InGaN/AIGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer

C. H. Chen; S. J. Chang; Y. K. Su

doi:10.1116/1.1688362

InGaN/AIGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer

C. H. Chen
, S. J. Chang
, Y. K. Su

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In_0.23Ga_0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In_0.23Ga _0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.

Original language	English
Pages (from-to)	1020-1022
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1688362
Publication status	Published - 2004 May

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1688362

Cite this

@article{8e970c89dc8a4f3f83a3c06e48fb5576,

title = "InGaN/AIGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer",

abstract = "InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In0.23Ga0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In0.23Ga 0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.",

author = "Chen, \{C. H.\} and Chang, \{S. J.\} and Su, \{Y. K.\}",

year = "2004",

month = may,

doi = "10.1116/1.1688362",

language = "English",

volume = "22",

pages = "1020--1022",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - InGaN/AIGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer

AU - Chen, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

PY - 2004/5

Y1 - 2004/5

N2 - InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In0.23Ga0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In0.23Ga 0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.

AB - InGaN/AlGaN near-ultraviolet multiple quantum wells (MQW) light emitting diodes (LED) with a p-In0.23Ga0.77N tunneling contact layer were fabricated. Samples used in the study were all grown on (0001)-oriented sapphire substrates by low pressure metalorganic chemical vapor deposition. A much larger hole concentration from p-In0.23Ga 0.77N layers were achieved as compared to p-GaN layers. The 20 mA operation voltage was reduced from 3.78 to 3.37 V and the near-ultraviolet LED output power and lifetime was improved by introducing a 5 nm thick layer on top of the p-GaN layer.

UR - https://www.scopus.com/pages/publications/3142537428

UR - https://www.scopus.com/pages/publications/3142537428#tab=citedBy

U2 - 10.1116/1.1688362

DO - 10.1116/1.1688362

M3 - Article

AN - SCOPUS:3142537428

SN - 0734-2101

VL - 22

SP - 1020

EP - 1022

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

InGaN/AIGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this