InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

L. W. Wu, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, C. H. Kuo, W. C. Lai, J. K. Sheu, J. M. Tsai, S. C. Chen, B. R. Huang

Research output: Contribution to journalArticlepeer-review

Abstract

Nitride-based light-emitting diodes (LEDs) with Si-doped n--In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.

Original languageEnglish
Pages (from-to)411-414
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number5
DOIs
Publication statusPublished - 2003 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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