InGaN/GaN light emitting diodes activated in O2 ambient

C. H. Kuo, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen, G. C. Chi

Research output: Contribution to journalLetterpeer-review

55 Citations (Scopus)

Abstract

Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

Original languageEnglish
Pages (from-to)240-242
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number5
DOIs
Publication statusPublished - 2002 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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