InGaN/GaN light emitting diodes activated in O2 ambient

C. H. Kuo, Shoou-Jinn Chang, Y. K. Su, Jone-Fang Chen, L. W. Wu, Jinn-Kong Sheu, C. H. Chen, G. C. Chi

Research output: Contribution to journalLetter

54 Citations (Scopus)

Abstract

Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

Original languageEnglish
Pages (from-to)240-242
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number5
DOIs
Publication statusPublished - 2002 May 1

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Light emitting diodes
Annealing
Epitaxial layers
Chemical activation
Temperature
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kuo, C. H. ; Chang, Shoou-Jinn ; Su, Y. K. ; Chen, Jone-Fang ; Wu, L. W. ; Sheu, Jinn-Kong ; Chen, C. H. ; Chi, G. C. / InGaN/GaN light emitting diodes activated in O2 ambient. In: IEEE Electron Device Letters. 2002 ; Vol. 23, No. 5. pp. 240-242.
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abstract = "Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.",
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InGaN/GaN light emitting diodes activated in O2 ambient. / Kuo, C. H.; Chang, Shoou-Jinn; Su, Y. K.; Chen, Jone-Fang; Wu, L. W.; Sheu, Jinn-Kong; Chen, C. H.; Chi, G. C.

In: IEEE Electron Device Letters, Vol. 23, No. 5, 01.05.2002, p. 240-242.

Research output: Contribution to journalLetter

TY - JOUR

T1 - InGaN/GaN light emitting diodes activated in O2 ambient

AU - Kuo, C. H.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Chen, Jone-Fang

AU - Wu, L. W.

AU - Sheu, Jinn-Kong

AU - Chen, C. H.

AU - Chi, G. C.

PY - 2002/5/1

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N2 - Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

AB - Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

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