InGaN/GaN light emitting diodes with a p-down structure

Y. K. Su, S. J. Chang, Chih Hsin Ko, J. F. Chen, Ta Ming Kuan, Wen How Lan, Wen Jen Lin, Ya Tung Cherng, Jim Webb

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Nitride-based p-down blue light emitting diodes (LEDs) were successfully fabricated. It was found that we could improve the crystal quality of these nitride-based p-town LEDs by inserting a codoped interlayer between the p-type cladding layer and MQW active layers. It was also found that the turn-on voltage could be reduced from 15 V to less than 5 V for the p-down LED with codoped layer and tunnel layer. The 20 mA output power was 1 mW for the p-down LED with an Mg+Si codoped interlayer and a rough p-tunnel layer.

Original languageEnglish
Pages (from-to)1361-1366
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume49
Issue number8
DOIs
Publication statusPublished - 2002 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Su, Y. K., Chang, S. J., Ko, C. H., Chen, J. F., Kuan, T. M., Lan, W. H., Lin, W. J., Cherng, Y. T., & Webb, J. (2002). InGaN/GaN light emitting diodes with a p-down structure. IEEE Transactions on Electron Devices, 49(8), 1361-1366. https://doi.org/10.1109/TED.2002.801277