InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

C. S. Chang; Shoou-Jinn Chang; Y. K. Su; Yu-Cheng Lin; Y. P. Hsu; S. C. Shei; S. C. Chen; C. H. Liu; U. H. Liaw

doi:10.1088/0268-1242/18/4/102

InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

C. S. Chang, Shoou-Jinn Chang, Y. K. Su, Yu-Cheng Lin, Y. P. Hsu, S. C. Shei, S. C. Chen, C. H. Liu, U. H. Liaw

Research output: Contribution to journal › Letter › peer-review

41 Citations (Scopus)

Abstract

Indium tin oxide (250 nm) and Ni(5 nm)/Au(10 nm) films were successfully deposited onto both glass substrates and p-GaN epitaxial layers. The normalized transmittance of the as-deposited ITO film was 90.6% at 450 nm, which was much larger than that of Ni/Au film. The transmittance of the RF sputtered ITO film could be increased to 97.8% with in situ annealing. In situ annealing of ITO films would also improve the electrical properties of ITO on p-GaN. Nitride-based light-emitting diodes (LEDs) were also fabricated. It was found that the 20 mA forward voltage was 3.16 V, 5.74 V and 4.28 V for the LEDs with Ni/Au, as-deposited ITO and in situ annealed ITO p-contact layer, respectively.

Original language	English
Pages (from-to)	L21-L23
Journal	Semiconductor Science and Technology
Volume	18
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/18/4/102
Publication status	Published - 2003 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/18/4/102

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@article{1bf6c587e93c49b8a485a478549fcb09,

title = "InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering",

abstract = "Indium tin oxide (250 nm) and Ni(5 nm)/Au(10 nm) films were successfully deposited onto both glass substrates and p-GaN epitaxial layers. The normalized transmittance of the as-deposited ITO film was 90.6% at 450 nm, which was much larger than that of Ni/Au film. The transmittance of the RF sputtered ITO film could be increased to 97.8% with in situ annealing. In situ annealing of ITO films would also improve the electrical properties of ITO on p-GaN. Nitride-based light-emitting diodes (LEDs) were also fabricated. It was found that the 20 mA forward voltage was 3.16 V, 5.74 V and 4.28 V for the LEDs with Ni/Au, as-deposited ITO and in situ annealed ITO p-contact layer, respectively.",

author = "Chang, {C. S.} and Shoou-Jinn Chang and Su, {Y. K.} and Yu-Cheng Lin and Hsu, {Y. P.} and Shei, {S. C.} and Chen, {S. C.} and Liu, {C. H.} and Liaw, {U. H.}",

year = "2003",

month = apr,

doi = "10.1088/0268-1242/18/4/102",

language = "English",

volume = "18",

pages = "L21--L23",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

AU - Chang, C. S.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Lin, Yu-Cheng

AU - Hsu, Y. P.

AU - Shei, S. C.

AU - Chen, S. C.

AU - Liu, C. H.

AU - Liaw, U. H.

PY - 2003/4

Y1 - 2003/4

N2 - Indium tin oxide (250 nm) and Ni(5 nm)/Au(10 nm) films were successfully deposited onto both glass substrates and p-GaN epitaxial layers. The normalized transmittance of the as-deposited ITO film was 90.6% at 450 nm, which was much larger than that of Ni/Au film. The transmittance of the RF sputtered ITO film could be increased to 97.8% with in situ annealing. In situ annealing of ITO films would also improve the electrical properties of ITO on p-GaN. Nitride-based light-emitting diodes (LEDs) were also fabricated. It was found that the 20 mA forward voltage was 3.16 V, 5.74 V and 4.28 V for the LEDs with Ni/Au, as-deposited ITO and in situ annealed ITO p-contact layer, respectively.

AB - Indium tin oxide (250 nm) and Ni(5 nm)/Au(10 nm) films were successfully deposited onto both glass substrates and p-GaN epitaxial layers. The normalized transmittance of the as-deposited ITO film was 90.6% at 450 nm, which was much larger than that of Ni/Au film. The transmittance of the RF sputtered ITO film could be increased to 97.8% with in situ annealing. In situ annealing of ITO films would also improve the electrical properties of ITO on p-GaN. Nitride-based light-emitting diodes (LEDs) were also fabricated. It was found that the 20 mA forward voltage was 3.16 V, 5.74 V and 4.28 V for the LEDs with Ni/Au, as-deposited ITO and in situ annealed ITO p-contact layer, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0037394376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037394376&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/18/4/102

DO - 10.1088/0268-1242/18/4/102

M3 - Letter

AN - SCOPUS:0037394376

SN - 0268-1242

VL - 18

SP - L21-L23

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

ER -

InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

Abstract

All Science Journal Classification (ASJC) codes

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