InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

C. S. Chang, Shoou-Jinn Chang, Y. K. Su, Yu-Cheng Lin, Y. P. Hsu, S. C. Shei, S. C. Chen, C. H. Liu, U. H. Liaw

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37 Citations (Scopus)

Abstract

Indium tin oxide (250 nm) and Ni(5 nm)/Au(10 nm) films were successfully deposited onto both glass substrates and p-GaN epitaxial layers. The normalized transmittance of the as-deposited ITO film was 90.6% at 450 nm, which was much larger than that of Ni/Au film. The transmittance of the RF sputtered ITO film could be increased to 97.8% with in situ annealing. In situ annealing of ITO films would also improve the electrical properties of ITO on p-GaN. Nitride-based light-emitting diodes (LEDs) were also fabricated. It was found that the 20 mA forward voltage was 3.16 V, 5.74 V and 4.28 V for the LEDs with Ni/Au, as-deposited ITO and in situ annealed ITO p-contact layer, respectively.

Original languageEnglish
Pages (from-to)L21-L23
JournalSemiconductor Science and Technology
Volume18
Issue number4
DOIs
Publication statusPublished - 2003 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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