InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts

Yu-Cheng Lin, Shoou-Jinn Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, C. W. Kuo, S. C. Chen

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Abstract

The optical and electrical properties of indium tin oxide (ITO)(60 nm), Ni(3.5 nm)/ITO(60 nm) and Ni(5 nm)/Au(5 nm) films were studied. It was found that the normalized transmittance of ITO and Ni/ITO films could reach 98.2% and 86.6% at 470 nm, which was much larger than that of the Ni/Au film. It was also found that both Ni/ITO and Ni/Au could form good ohmic contact on top of p-GaN. In contrast, ITO on p-GaN was electrically poor and non-ohmic. Nitride-based light-emitting diodes (LEDs) with these three p-contact layers were also fabricated. It was found that the LED forward voltage was 3.65, 3.26 and 3.24 V for the LEDs with ITO, Ni/ITO and Ni/Au p-contact layer, respectively. With a 20 mA current injection, it was also found that measured output power was 7.50, 6.59 and 5.26 mW for the LEDs with ITO, Ni/ITO and Ni/Au p-contact layer, respectively. Although the LED with ITO p-contact could provide the largest output intensity, its lifetime was the shortest due to severe heating effect.

Original languageEnglish
Pages (from-to)849-853
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number5
DOIs
Publication statusPublished - 2003 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Lin, Y-C., Chang, S-J., Su, Y. K., Tsai, T. Y., Chang, C. S., Shei, S. C., Kuo, C. W., & Chen, S. C. (2003). InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts. Solid-State Electronics, 47(5), 849-853. https://doi.org/10.1016/S0038-1101(02)00440-9