InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts

Chia Sheng Chang; Shoou Jinn Chang; Yan Kuin Su; Yu Zung Chiou; Yi Chao Lin; Yu Pin Hsu; Shih Chang Shei; Hsin Ming Lo; Jung Chin Ke; Shih Chih Chen; Chun Hsing Liu

doi:10.1143/jjap.42.3324

InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts

Chia Sheng Chang, Shoou Jinn Chang, Yan Kuin Su, Yu Zung Chiou, Yi Chao Lin, Yu Pin Hsu, Shih Chang Shei, Hsin Ming Lo, Jung Chin Ke, Shih Chih Chen, Chun Hsing Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were 5.0 × 10^-4 Ωcm², 1.3 × 10^-3 Ωcm² and 7.2 × 10^-4 Ωcm² for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact.

Original language	English
Pages (from-to)	3324-3327
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.42.3324
Publication status	Published - 2003 Jun

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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@article{f1052096125d4390a8948215f1786426,

title = "InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts",

abstract = "Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were 5.0 × 10-4 Ωcm2, 1.3 × 10-3 Ωcm2 and 7.2 × 10-4 Ωcm2 for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact.",

author = "Chang, {Chia Sheng} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Chiou, {Yu Zung} and Lin, {Yi Chao} and Hsu, {Yu Pin} and Shei, {Shih Chang} and Lo, {Hsin Ming} and Ke, {Jung Chin} and Chen, {Shih Chih} and Liu, {Chun Hsing}",

year = "2003",

month = jun,

doi = "10.1143/jjap.42.3324",

language = "English",

volume = "42",

pages = "3324--3327",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "6 A",

}

TY - JOUR

T1 - InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts

AU - Chang, Chia Sheng

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Chiou, Yu Zung

AU - Lin, Yi Chao

AU - Hsu, Yu Pin

AU - Shei, Shih Chang

AU - Lo, Hsin Ming

AU - Ke, Jung Chin

AU - Chen, Shih Chih

AU - Liu, Chun Hsing

PY - 2003/6

Y1 - 2003/6

N2 - Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were 5.0 × 10-4 Ωcm2, 1.3 × 10-3 Ωcm2 and 7.2 × 10-4 Ωcm2 for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact.

AB - Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were 5.0 × 10-4 Ωcm2, 1.3 × 10-3 Ωcm2 and 7.2 × 10-4 Ωcm2 for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact.

UR - http://www.scopus.com/inward/record.url?scp=0041880648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041880648&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.3324

DO - 10.1143/jjap.42.3324

M3 - Article

AN - SCOPUS:0041880648

SN - 0021-4922

VL - 42

SP - 3324

EP - 3327

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts

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