InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer

S. M. Wang, T. P. Chen, S. J. Chang, P. C. Chang, S. J. Young, H. Hung, M. H. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - 2009
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: 2009 Dec 92009 Dec 11

Publication series

Name2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period09-12-0909-12-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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