InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai, C. C. Lin

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

Original languageEnglish
Pages (from-to)214-217
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number2-3
Publication statusPublished - 2004 Aug 25

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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