InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

C. H. Liu; R. W. Chuang; S. J. Chang; Y. K. Su; C. H. Kuo; J. M. Tsai; C. C. Lin

doi:10.1016/j.mseb.2004.04.015

InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai, C. C. Lin

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

Original language	English
Pages (from-to)	214-217
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	111
Issue number	2-3
DOIs	https://doi.org/10.1016/j.mseb.2004.04.015
Publication status	Published - 2004 Aug 25

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2004.04.015

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title = "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers",

abstract = "Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.",

author = "Liu, {C. H.} and Chuang, {R. W.} and Chang, {S. J.} and Su, {Y. K.} and Kuo, {C. H.} and Tsai, {J. M.} and Lin, {C. C.}",

note = "Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046.",

year = "2004",

month = aug,

day = "25",

doi = "10.1016/j.mseb.2004.04.015",

language = "English",

volume = "111",

pages = "214--217",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "2-3",

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TY - JOUR

T1 - InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

AU - Liu, C. H.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Kuo, C. H.

AU - Tsai, J. M.

AU - Lin, C. C.

N1 - Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046.

PY - 2004/8/25

Y1 - 2004/8/25

N2 - Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

AB - Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

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U2 - 10.1016/j.mseb.2004.04.015

DO - 10.1016/j.mseb.2004.04.015

M3 - Article

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SN - 0921-5107

VL - 111

SP - 214

EP - 217

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2-3

ER -

InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

Abstract

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