InGaN/GaN MQW p-n junction photodetectors

Yu Zung Chiou, Yan Kuin Su, Shoou Jinn Chang, Yi Chao Lin, Chia Sheng Chang, Chin Hsiang Chen

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

InGaN/GaN multiquantum well (MQW) p-n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p-n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 105 when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p-n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.

Original languageEnglish
Pages (from-to)2227-2229
Number of pages3
JournalSolid-State Electronics
Volume46
Issue number12
DOIs
Publication statusPublished - 2002 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'InGaN/GaN MQW p-n junction photodetectors'. Together they form a unique fingerprint.

Cite this