InGaN/GaN multi-quantum dot light-emitting diodes

L. W. Ji, Y. K. Su, S. J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L. Du, H. Chen

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition. We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.

Original languageEnglish
Pages (from-to)114-118
Number of pages5
JournalJournal of Crystal Growth
Volume263
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Ji, L. W., Su, Y. K., Chang, S. J., Chang, C. S., Wu, L. W., Lai, W. C., Du, X. L., & Chen, H. (2004). InGaN/GaN multi-quantum dot light-emitting diodes. Journal of Crystal Growth, 263(1-4), 114-118. https://doi.org/10.1016/j.jcrysgro.2003.08.083