InGaN/GaN multi-quantum dot light-emitting diodes

L. W. Ji; Y. K. Su; S. J. Chang; C. S. Chang; L. W. Wu; W. C. Lai; X. L. Du; H. Chen

doi:10.1016/j.jcrysgro.2003.08.083

InGaN/GaN multi-quantum dot light-emitting diodes

L. W. Ji
, Y. K. Su
, S. J. Chang
, C. S. Chang
, L. W. Wu
, W. C. Lai
, X. L. Du
, H. Chen

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition. We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.

Original language	English
Pages (from-to)	114-118
Number of pages	5
Journal	Journal of Crystal Growth
Volume	263
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.08.083
Publication status	Published - 2004 Mar 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2003.08.083

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@article{c85abc390c08411ba639ee7a1cd7a570,

title = "InGaN/GaN multi-quantum dot light-emitting diodes",

abstract = "It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition. We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.",

author = "Ji, \{L. W.\} and Su, \{Y. K.\} and Chang, \{S. J.\} and Chang, \{C. S.\} and Wu, \{L. W.\} and Lai, \{W. C.\} and Du, \{X. L.\} and H. Chen",

note = "Funding Information: The authors would like to thank Y. Wang at Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, for the HRTEM measurement. This work was financially supported by the National Science Council of Taiwan (Project No. NSC 91-2215-E-006-012).",

year = "2004",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2003.08.083",

language = "English",

volume = "263",

pages = "114--118",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "1-4",

}

TY - JOUR

T1 - InGaN/GaN multi-quantum dot light-emitting diodes

AU - Ji, L. W.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chang, C. S.

AU - Wu, L. W.

AU - Lai, W. C.

AU - Du, X. L.

AU - Chen, H.

N1 - Funding Information: The authors would like to thank Y. Wang at Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, for the HRTEM measurement. This work was financially supported by the National Science Council of Taiwan (Project No. NSC 91-2215-E-006-012).

PY - 2004/3/1

Y1 - 2004/3/1

N2 - It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition. We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.

AB - It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition. We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.

UR - https://www.scopus.com/pages/publications/1242308877

UR - https://www.scopus.com/pages/publications/1242308877#tab=citedBy

U2 - 10.1016/j.jcrysgro.2003.08.083

DO - 10.1016/j.jcrysgro.2003.08.083

M3 - Article

AN - SCOPUS:1242308877

SN - 0022-0248

VL - 263

SP - 114

EP - 118

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

InGaN/GaN multi-quantum dot light-emitting diodes

Abstract

All Science Journal Classification (ASJC) codes

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