InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers

Ping Chuan Chang, Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Po Chang Chen, Yi De Jhou, Chun Hsing Liu, Hung Hung, Shih Ming Wang

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


InGaN/GaN multiple-quantum well (MQW) structure was epitaxial growth by metal-organic chemical vapor deposition (MOCVD). Their MIS photodiodes with SiO2 interlayer were fabricated successfully using photochemical vapor deposition. The normal undoped-GaN metal-semiconductor-metal (MSM) potodiodes were also prepared to compare with them. It was found that the minimum dark current of InGaN/GaN MQW photodiodes was 4.2 × 10 -13 A with 88nm-thick SiO2 layer under 5 V reverse bias voltage. Furthermore, it was found that we can significantly reduce the dark current of this photodiodes by inserting a thin SiO2 interlayer in between metal electrode and the underneath InGaN/GaN MQW. With a 53 nm-thick SiO2 interlayer, it was also found that we could achieve a high 1.53 × 103 photo current to dark current contrast.

Original languageEnglish
Pages (from-to)2008-2010
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2004 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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