InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)


An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.

Original languageEnglish
Pages (from-to)2257-2260
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
Publication statusPublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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