InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

Chin Hsiang Chen; Shoou Jinn Chang; Yan Kuin Su

doi:10.1002/pssc.200303418

InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm² LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.

Original language	English
Pages (from-to)	2257-2260
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303418
Publication status	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200303418

Cite this

@article{0fb812a9078f4348850bdc9d7c207587,

title = "InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes",

abstract = "An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.",

author = "Chen, {Chin Hsiang} and Chang, {Shoou Jinn} and Su, {Yan Kuin}",

year = "2003",

doi = "10.1002/pssc.200303418",

language = "English",

pages = "2257--2260",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

AU - Chen, Chin Hsiang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

PY - 2003

Y1 - 2003

N2 - An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.

AB - An InGaN/GaN blue light emitting diode (LED) structure and an InGaN/GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near-white LED. In order to avoid the thyristor effect, we choose a large 1 × 1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near-white light emission with CIE color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a near-white LED were 4.2 mW, 0.81 m/W, and 9000 K, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84875115024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875115024&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303418

DO - 10.1002/pssc.200303418

M3 - Conference article

AN - SCOPUS:84875115024

SN - 1610-1634

SP - 2257

EP - 2260

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes

Abstract

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